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Volumn , Issue , 2008, Pages 554-557

An innovative sub-32nm SRAM voltage sense amplifier in double-gate CMOS insensitive to process variations and transistor mismatch

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); LEAKAGE CURRENTS; MOSFET DEVICES; NETWORKS (CIRCUITS); TRANSISTORS;

EID: 57849118059     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICECS.2008.4674913     Document Type: Conference Paper
Times cited : (1)

References (5)
  • 1
    • 43049168544 scopus 로고    scopus 로고
    • Low-Voltage Limitations of Nano-Scale CMOS LSIs: Current Status and Future Trends
    • Taiwan
    • Kiyoo Itoh, and Riichiro Takemura, "Low-Voltage Limitations of Nano-Scale CMOS LSIs: Current Status and Future Trends", EDSSC, December 2007, Taiwan.
    • (2007) EDSSC, December
    • Itoh, K.1    Takemura, R.2
  • 2
    • 34548835200 scopus 로고    scopus 로고
    • Statistical characterization and on-chip measurement methods for local random variability of a process using sense-amplifier-based test structure
    • february San Francisco, CA, USA
    • Saibal Mukhopadhyay, Keunwoo Kim, Keith A. Jenkins, Ching-Te Chuang, and Kaushik Roy, "Statistical characterization and on-chip measurement methods for local random variability of a process using sense-amplifier-based test structure", ISSCC, february 2007 San Francisco, CA, USA
    • (2007) ISSCC
    • Mukhopadhyay, S.1    Kim, K.2    Jenkins, K.A.3    Chuang, C.-T.4    Roy, K.5
  • 3
    • 33748558677 scopus 로고    scopus 로고
    • Design of high performance sense amplifier using independent gate control in sub-50nm double-gate MOSFET
    • San Jose, CA, USA
    • Saibal Mukhopadhyay, Hamid Mahmoodi, and Kaushik Roy, "Design of high performance sense amplifier using independent gate control in sub-50nm double-gate MOSFET", ISQED, March 2005, San Jose, CA, USA.
    • (2005) ISQED, March
    • Mukhopadhyay, S.1    Mahmoodi, H.2    Roy, K.3
  • 5
    • 50649105048 scopus 로고    scopus 로고
    • Read Stability and Write Ability Tradeoff for 6T SRAM Cells in Double-Gate CMOS
    • Hong Kong
    • Bastien Giraud and Amara Amara, "Read Stability and Write Ability Tradeoff for 6T SRAM Cells in Double-Gate CMOS", DELTA, January 2008, Hong Kong.
    • (2008) DELTA, January
    • Giraud, B.1    Amara, A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.