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Volumn , Issue , 2008, Pages 554-557
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An innovative sub-32nm SRAM voltage sense amplifier in double-gate CMOS insensitive to process variations and transistor mismatch
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Author keywords
[No Author keywords available]
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Indexed keywords
AMPLIFIERS (ELECTRONIC);
LEAKAGE CURRENTS;
MOSFET DEVICES;
NETWORKS (CIRCUITS);
TRANSISTORS;
BACK GATES;
FULLY DEPLETED;
INPUT NODES;
OPERATION MARGINS;
PROCESS VARIATIONS;
PROPOSED ARCHITECTURES;
SELF-ALIGNED;
SILICON ON INSULATORS;
TRANSISTOR MISMATCHES;
VOLTAGE SENSES;
SILICON ON INSULATOR TECHNOLOGY;
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EID: 57849118059
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/ICECS.2008.4674913 Document Type: Conference Paper |
Times cited : (1)
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References (5)
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