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Volumn , Issue , 2003, Pages 156-161

A long-channel model for the asymmetric double-gate MOSFET valid in all regions of operation

Author keywords

Analog circuits; Circuit simulation; Computational modeling; Convergence; Electrons; Laplace equations; MOSFET circuits; Physics computing; Silicon; Voltage

Indexed keywords

ANALOG CIRCUITS; CIRCUIT SIMULATION; ELECTRIC POTENTIAL; ELECTRONS; LAPLACE EQUATION; MIXED SIGNAL INTEGRATED CIRCUITS; SILICON;

EID: 84942524757     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SSMSD.2003.1190416     Document Type: Conference Paper
Times cited : (2)

References (4)
  • 4
    • 0033732282 scopus 로고    scopus 로고
    • An Analytical Solution to a Double-Gate MOSFET with Undoped Body
    • Y. Taur, "An Analytical Solution to a Double-Gate MOSFET with Undoped Body," IEEE Electron Device Letters, vol. 21, no. 5, pp. 245-247, 2000.
    • (2000) IEEE Electron Device Letters , vol.21 , Issue.5 , pp. 245-247
    • Taur, Y.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.