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Volumn , Issue , 2003, Pages 156-161
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A long-channel model for the asymmetric double-gate MOSFET valid in all regions of operation
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Author keywords
Analog circuits; Circuit simulation; Computational modeling; Convergence; Electrons; Laplace equations; MOSFET circuits; Physics computing; Silicon; Voltage
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Indexed keywords
ANALOG CIRCUITS;
CIRCUIT SIMULATION;
ELECTRIC POTENTIAL;
ELECTRONS;
LAPLACE EQUATION;
MIXED SIGNAL INTEGRATED CIRCUITS;
SILICON;
CIRCUIT SIMULATORS;
COMPUTATIONAL MODEL;
CONVERGENCE;
CONVERGENCE BEHAVIORS;
DERIVATIVES OF THE CURRENTS;
DOUBLE GATE MOSFET;
DOUBLE-GATE MOSFETS;
MOSFET CIRCUITS;
MOSFET DEVICES;
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EID: 84942524757
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/SSMSD.2003.1190416 Document Type: Conference Paper |
Times cited : (2)
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References (4)
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