Electrical characterization and modelling of high-performance SON DG MOSFETs

ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference

Volumn , Issue , 2004, Pages 373-376

  Harrison, S ^a,b   Munteanu, D ^a   Autran, J L ^a,c   Cros, A ^b   Cerutti, R ^b   Skotnicki, T ^b  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b STMICROELECTRONICS   (France)

^c INSTITUT UNIVERSITAIRE DE FRANCE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT TRANSIENTS; LOW FIELD MOBILITY; SILICON-ON-NOTHING; THRESHOLD VOLTAGES;

COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC POTENTIAL; ELECTROSTATICS; QUANTUM THEORY; TRANSISTORS;

MOSFET DEVICES;

EID: 17644379094     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

1. S.Harrison et al., IEDM Tech. Dig., p. 449 (2003).
2. M.Jurczak et al., IEEE Trans. Electron Dev. 47, 2179 (2000).
3. S.Harrison et al, VLSI Silicon Nanoelectronics Workshop, in press (2004).
4. D.Munteanu et al, Solid-State Electron. 47, 1219 (2003).
5. M.Alessandrini et al., Solid-State Electron. 48, 589 (2004).
6. D.Munteanu et al., Proceedings of the 4th European workshop ULIS'2003, p. 35 (2003).
7. S.Banna et al., IEEE Trans. Electron Dev. 42, 1949 (1995).
8. S.Biesemans et al., Solid-State Electron. 39, 43 (1996).
9. Y. Taur, IEEE Trans. Electron Dev. 48, 2861 (2001).
10. J.L.Autran et al., Proceedings of Nanotech 2004 (Workshop on Compact Modeling), p. 163-166 (2004).
11. R.Vankemmel et al., Solid State Electron. 36, 1379 (1993).