A physical compact model of DG MOSFET for mixed-signal circuit applications - Part II: Parameter extraction

IEEE Transactions on Electron Devices

Volumn 50, Issue 10, 2003, Pages 2144-2153

  Pei, Gen ^a   Kan, Edwin Chih Chuan ^a  

^a School of Chemical and Molecular Engineering   (United States)

Author keywords

Compact model; Double gate (DG) MOSFET; Mixed signal; Parameter extraction

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; EXTRAPOLATION; PARAMETER ESTIMATION; SEMICONDUCTOR DEVICE MODELS; SIGNAL PROCESSING; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

DRAIN CURRENT; DRAIN INDUCED BARRIER LOWERING; DRAIN RESISTANCE; LINEAR EXTRAPOLATION; MIXED-SIGNAL CIRCUIT; PARAMETER EXTRACTION; PHYSICAL COMPACT MODEL;

MOSFET DEVICES;

EID: 0141974954     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.817480     Document Type: Article

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