Piezoresistive sensitivity, linearity and resistance time drift of polysilicon nanofilms with different deposition temperatures

Sensors

Volumn 9, Issue 2, 2009, Pages 1141-1166

  Shi, Changzhi ^a,b   Liu, Xiaowei ^a,b   Chuai, Rongyan ^c  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b Ministry of Education   (Taiwan)

^c Shenyang University of Technology   (Taiwan)

Author keywords

Deposition temperature; Interstitial vacancy pair; Linearity; Piezoresistive effect; Polysilicon nanofilm; Resistance time drift; Tunneling

Indexed keywords

DEPOSITION TEMPERATURES; INTERSTITIAL-VACANCY PAIR; LINEARITY; PIEZORESISTIVE EFFECTS; POLYSILICON NANOFILM; RESISTANCE TIME;

DEPOSITION; ELECTRON TUNNELING; GRAIN BOUNDARIES; POLYSILICON; SEMICONDUCTOR DOPING; THICK FILMS;

TEMPERATURE MEASURING INSTRUMENTS;

EID: 63849125365     PISSN: 14248220     EISSN: None     Source Type: Journal    
DOI: 10.3390/s90201141     Document Type: Article

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