Atomistic analysis of annealing behavior of amorphous regions

2005 Spanish Conference on Electron Devices, Proceedings

Volumn 2005, Issue , 2005, Pages 427-430

  López, Pedro ^a   Pelaz, Lourdes ^a   Marques, Luis A ^a   Santos, Ivan ^a   Aboy, María ^a   Barbolla, Juan ^a  

^a UNIVERSITY OF VALLADOLID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GEOMETRY; RECRYSTALLIZATION (METALLURGY);

AMORPHOUS PHASE; ANNEALING BEHAVIOR; INTERSTITIAL-VACANCY PAIR;

AMORPHOUS MATERIALS;

EID: 33745683591     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SCED.2005.1504472     Document Type: Conference Paper

References (25)

1. M. Y. Tsai and B. G. Streetman, J. Appl. Phys. 50, 183 (1979).
2. G. Hobler and G. Otto, Materials Science in Semiconductor Processing. 6, 1 (2003).
3. L. Pelaz, L.A. Marques, M. Aboy and J. Barbolla, Appl. Phys. Lett. 82, 2038 (2003).
4. L. Pelaz, O. H. Gilmer, V. C. Venecia, H. -J. Gossmann, M. Jaraiz and J. Barbolla, Appl. Phys. Lett. 74, 2017 (1999).
5. M. T. Robinson and I. M. Torrens, Phys. Rev. B 9, 5008 (1974).
6. M. Jaraiz, L. Pelaz, J. E. Rubio, J. Barbolla, G. H. Gilmer, D. J. Eaglesham, H. -J. Gossman, and J. M. Poate, Mater. Res. Soc. Symp. Proc. 532, 43 (1998).
7. D. J. Eaglesham, P. A. Stolk, H. -J. Gossmann, and J. M. Poate, Appl. Phys. Lett. 65, 2305 (1994).
8. N. E. B. Cowem et al. Phys. Rev. Lett. 82, 4460 (1999).
9. L.A. Marqués, L. Pelaz, J. Hernandez, J. Barbolla, and G.H. Gilmer, Phys. Rev. B 64, 045214 (2001).
10. M. Tang, L. Colombo, J. Zhu, and T. Diaz de la Rubia, Phys. Rev. B 55, 4279 (1997).
11. G.L. Olson and J.A. Roth, Material Science Reports 3, 78 (1988).
12. Y. Masaki, P.G. LeComber, and A.G. Fitzgerald, J. Appl. Phys. 74, 129 (1993).
13. T. Diaz de la Rubia and G.H. Gilmer, Phys. Rev. Lett. 74, 2507 (1995).
14. K. Sadana, M. Stratham, J. Washburn, and G. R. Booker, J. Appl. Phys. 51, 5718 (1980).
15. J. Narayan, J. Appl. Phys. 53, 8607 (1982).
16. F. Spaepen and D. Turnbull, in Laser Annealing of Semiconductors, edited by J. M. Poate and J. W. Mayer (Academic Press, New York, 1982).
17. J. A. Roth, G. L. Olson, D. C. Jacobson and J. M. Poate, Appl. Phys. Lett. 57, 1340 (1990).
18. J. S. Williams and R. G. Elliman, Phys. Rev. Lett. 51, 1069 (1983).
19. A. Battaglia, F. Priolo, E. Rimini and G. Ferla, Appl. Phys. Lett. 56, 2622 (1990).
20. A. Battaglia, F. Priolo, C. Spinella and E. Rimini, Nucl. Instrum. Methods Phys. Res. B 55, 611 (1991).
21. S. E. Donnelly, R. C. Birtcher, V. M. Vishnyakov and G. Carter, Appl. Phys. Lett. 82, 1860 (2003).
22. M.-J. Caturla, T. Diaz de la Rubia, and L. A. Marques, Phys. Rev. B 54, 16683 (1996).
23. L.A. Marques, private communication.
24. F. Priolo, A. Battaglia, R. Nicotra and E. Rimini, Appl. Phys. Lett. 57, 768 (1990).
25. O. W. Holland, C. W. White, M. K. El-Ghor and J. D. Budai, J. Appl. Phys. 68, 2081 (1990).