Annealing of isolated amorphous zones in silicon

Applied Physics Letters

Volumn 82, Issue 12, 2003, Pages 1860-1862

  Donnelly, S E ^a   Birtcher, R C ^b   Vishnyakov, V M ^a   Carter, G ^a  

^a UNIVERSITY OF SALFORD   (United Kingdom)

^b ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; COMPUTER SIMULATION; CRYSTALLIZATION; ION IMPLANTATION; MOLECULAR DYNAMICS; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

ISOCHRONAL ANNEALING;

AMORPHOUS SILICON;

EID: 0344942480     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1562336     Document Type: Article

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