Electrical and piezoresistive characterization of boron-doped LPCVD polycrystalline silicon under rapid thermal annealing

Sensors and Actuators, A: Physical

Volumn 54, Issue 1-3, 1996, Pages 700-703

  Le Berre, M ^a   Kleimann, P ^a   Semmache, B ^a   Barbier, D ^a   Pinard, P ^a  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

Boron; Electrical properties; Piezoresistivity; Polysilicon; Pressure sensors; Rapid thermal annealing

Indexed keywords

EID: 30244535643     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(97)80041-6     Document Type: Article

References (14)

1. E. Obermeier and P. Kopystynski, Polysilicon as a material for microsensor applications, Sensors and Actuators A, 30 (1992) 149-155.
2. P.J. French and A.G.R. Evans, Piezoresistance in polysilicon and its applications to strain gauges, Solid-State Electron., 32 (1989) 1-10.
3. J. Suski, V. Mosser and V. Goss, Polysilicon SOI pressure sensor, Sensors and Actuators, 17 (1989) 405-414.
4. D. Schubert, W. Jenschke, T. Uhlig and F.-M. Schmidt, Piezoresistive properties of polycrystalline and crystalline silicon films, Sensors and Actuators, 11 (1987) 145-155.
5. M. Le Berre, M. Lemiti, D. Barbier, P. Pinard, J. Cali, E. Bustarret, J. Sicar and J.-L. Robert, Piezoresistance of boron-doped PECVD and LPCVD polycrystalline silicon films, Sensors and Actuators A, 46 (1995) 166-170; M. Le Berre, M. Lemiti, D. Barbier, P. Pinard, J. Cali, E. Bustarret, J.-C. Bruyère, J. Sicart and J.-L. Robert, Piezoresistive properties of boron-doped PECVD micro- and polycrystalline silicon films, Mater. Res. Soc. Symp. Proc., 343 (1994) 733-738.
6. M. Le Berre, M. Lemiti, D. Barbier, P. Pinard, J. Cali, E. Bustarret, J. Sicar and J.-L. Robert, Piezoresistance of boron-doped PECVD and LPCVD polycrystalline silicon films, Sensors and Actuators A, 46 (1995) 166-170; M. Le Berre, M. Lemiti, D. Barbier, P. Pinard, J. Cali, E. Bustarret, J.-C. Bruyère, J. Sicart and J.-L. Robert, Piezoresistive properties of boron-doped PECVD micro- and polycrystalline silicon films, Mater. Res. Soc. Symp. Proc., 343 (1994) 733-738.
7. J. Binder, W. Henning, E. Obermeier, H. Schaber and D. Cutter, Laser-recrystallized polysilicon resistors for sensing and integrated circuits applications, Sensors and Actuators, 4 (1983) 527-536.
8. P. Jeanjean, J. Sicart, J.-L. Robert, M. Le Berre, P. Pinard and V. Conedera, Annealing related electrical and piezoresistive properties of B- and As-implanted LPCVD silicon films, J. Phys. III France, 3 (1993) 47-53.
9. Y. Sasaki, K. Itoh, E. Inoue, S. Kishi and T. Mitsuishi, A new experimental determination of the relationship between the Hall mobility and the Hall concentration in heavily doped p-type silicon, Solid-State Electron., 31 (1988) 5-12.
10. R.S. Wilson, R.B. Gregory, W.M. Paulson, S.J. Krause, J.D. Gressett, A.H. Hamdi, F.D. McDaniel and R.G. Downing, Properties of ion-implanted polycristalline Si layers subjected to rapid thermal annealing, J. Electrochem. Soc., 132 (1985) 922-929.
11. P. Jeanjean, J. Sicart, P. Sellitto, J.-L. Robert, E. Bustarret, W. Grieshaber, J. Cali, M. Le Berre, M. Lemiti, P. Pinard and V. Conedera, Electrical and structural properties of rapid thermally annealed boron-doped silicon films deposited by plasma-enhanced chemical-vapor deposition, J. Appl. Phys., 76 (1994) 4682-4688.
12. T.-I. Kamins, Hall mobility in chemically deposited polycrystalline silicon, J. Appl. Phys., 42 (1971) 4357-4365.
13. J.Y.W. Seto, The electrical properties of polycristalline silicon films, J. Appl. Phys., 46 (1975) 5247-5254.
14. C. Gontrand, A. Merabet, B. Semmache, S. Krieger-Kaddour, C. Bergaud, M. Lemiti, D. Barbier and A. Laugier, Co-diffusion of As and B in and from polysilicon during rapid thermal annealing, Semicond. Sci. Technol., 8 (1993) 155-162.