Giant room-temperature piezoresistance in a metal-silicon hybrid structure

Physical Review Letters

Volumn 100, Issue 14, 2008, Pages

  Rowe, A C H ^a   Donoso Barrera, A ^b   Renner, Ch ^b,c   Arscott, S ^d  

^a LABORATOIRE DE PHYSIQUE DE LA MATIÈRE CONDENSÉE   (France)

^b UNIVERSITY COLLEGE LONDON   (United Kingdom)

^c UNIVERSITY OF GENEVA   (Switzerland)

^d INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; PIEZOELECTRICITY; SILICON ALLOYS;

GAGE FACTORS; METAL-SILICON HYBRID STRUCTURE;

MOS DEVICES;

EID: 41949132236     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.100.145501     Document Type: Article

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