Influence of doping level on the gauge factor of polysilicon nano-film

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 27, Issue 7, 2006, Pages 1230-1235

  Chuai, Rongyan ^a,b   Liu, Xiaowei ^a   Huo, Mingxue ^a   Song, Minghao ^a   Wang, Xilian ^a   Pan, Huiyan ^a  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b SHENYANG UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Gauge factor; Nano film; Piezoresistive property; Polysilicon; Tunnel effect

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTRON TUNNELING; MICROELECTROMECHANICAL DEVICES; POLYSILICON; SCANNING ELECTRON MICROSCOPY; SENSORS; STRUCTURE (COMPOSITION); X RAY DIFFRACTION ANALYSIS;

GAUGE FACTOR; LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); MONOCRYSTALLINE SILICON; NANOFILM; PIEZORESISTIVE PROPERTY; SCANNING ELECTRON PHOTOMICROGRAPHS; STRAIN SENSORS; TUNNEL EFFECT; X RAY DIFFRACTION SPECTRA;

THIN FILMS;

EID: 33748205501     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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