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Volumn 25, Issue 3, 2004, Pages 292-296

Theoretical research on piezoresistive coefficients of polysilicon films

Author keywords

Piezoresistive coefficient; Polysilicon; Stress decouple model

Indexed keywords

ELECTRIC RESISTANCE; GRAIN BOUNDARIES; PIEZOELECTRICITY; POLYSILICON; STRESSES;

EID: 7244259007     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (8)

References (8)
  • 1
    • 0023313692 scopus 로고
    • Piezoresistive properties of polycrystalline and crystalline silicon films
    • Schubert D, Jenschke W, Uhlig T, et al. Piezoresistive properties of polycrystalline and crystalline silicon films. Sensors and Actuators, 1987, 11: 145
    • (1987) Sensors and Actuators , vol.11 , pp. 145
    • Schubert, D.1    Jenschke, W.2    Uhlig, T.3
  • 2
    • 0024481433 scopus 로고
    • Piezoresistance in polysilicon and its application to strain gauges
    • French P J, Evans A G R. Piezoresistance in polysilicon and its application to strain gauges. Solid-State Electron, 1989, 32: 1
    • (1989) Solid-State Electron , vol.32 , pp. 1
    • French, P.J.1    Evans, A.G.R.2
  • 3
    • 0017016929 scopus 로고
    • Piezoresistive properties of polycrystalline silicon
    • Seto J Y W. Piezoresistive properties of polycrystalline silicon. J Appl Phys, 1976, 47: 4780
    • (1976) J Appl Phys , vol.47 , pp. 4780
    • Seto, J.Y.W.1
  • 4
    • 0026188346 scopus 로고
    • Piezoresistive pressure sensors based on polycrystalline silicon
    • Mosser V, Suski J, Goss J, et al. Piezoresistive pressure sensors based on polycrystalline silicon. Sensors and Actuators, 1991, A28: 113
    • (1991) Sensors and Actuators , vol.A28 , pp. 113
    • Mosser, V.1    Suski, J.2    Goss, J.3
  • 5
    • 0022894798 scopus 로고
    • Polycrystalline silicon as a strain gauge material
    • French P J, Evans A G. Polycrystalline silicon as a strain gauge material. J Phys E: Sci Instrum, 1986, 19: 1055
    • (1986) J Phys E: Sci Instrum , vol.19 , pp. 1055
    • French, P.J.1    Evans, A.G.2
  • 6
    • 36149015916 scopus 로고
    • Cyclotron resonance experiments in uniaxially stressed silicon: valence band inverse mass parameters and deformation potentials
    • Hensel J C, Feher G. Cyclotron resonance experiments in uniaxially stressed silicon: valence band inverse mass parameters and deformation potentials. Phys Rev, 1963, 129(3): 1041
    • (1963) Phys Rev , vol.129 , Issue.3 , pp. 1041
    • Hensel, J.C.1    Feher, G.2
  • 7
    • 0024068636 scopus 로고
    • Statistical model for piezoresistance in thin polysilicon films
    • Kanda Y, Suzuki K. Statistical model for piezoresistance in thin polysilicon films. Appl Surface Sci, 1988, 33/34: 996
    • (1988) Appl Surface Sci , vol.33-34 , pp. 996
    • Kanda, Y.1    Suzuki, K.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.