Long-term stability and electrical properties of fluorine doped polysilicon IC-resistors

Materials Science in Semiconductor Processing

Volumn 4, Issue 4, 2001, Pages 373-382

  Rydberg, Matts ^a   Smith, Ulf ^b  

^a UPPSALA UNIVERSITY   (Sweden)

^b ERICSSON RESEARCH   (Sweden)

Author keywords

Fluorine doping; Hall mobility; Long term stability; Polysilicon; Resistivity measurements; Thin film resistor

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY MEASUREMENT; FLUORINE; HALL EFFECT; POLYSILICON; RESISTORS;

HALL MOBILITY;

THIN FILM DEVICES;

EID: 0035427711     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(01)00005-1     Document Type: Article

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