The influences of thickness on piezoresistive properties of poly-Si nanofilms

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6186, Issue , 2006, Pages

  Liu, Xiaowei ^a   Chuai, Rongyan ^a,b   Song, Minghao ^a   Pan, Huiyan ^a   Xu, Xiaowei ^a  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b SHENYANG UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Film thickness; Gauge factor; Grain boundary; Grain size; Microstrucrure; Nanofilm; Piezoresistive effect; Piezoresistive model; Poly Si; Tunnel effect

Indexed keywords

ELECTRIC CURRENTS; FILM GROWTH; GRAIN BOUNDARIES; MICROSTRUCTURE; PIEZOELECTRICITY; POLYSILICON;

FILM THICKNESS; GRAIN BOUNDARY BARRIER; PIEZORESISTIVE PROPERTIES; POLY-SI NANOFILMS;

THIN FILMS;

EID: 33746708190     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.662348     Document Type: Conference Paper

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