Temperature characteristics of polysilicon piezoresistive nanofilm depending on film structure

2008 2nd IEEE International Nanoelectronics Conference, INEC 2008

Volumn , Issue , 2008, Pages 909-913

  Liu, Xiaowei ^a   Wu, Yajing ^a   Chuai, Rongyan ^a,b   Shi, Changzhi ^a   Chen, Weiping ^a   Li, Jinfeng ^a  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b SHENYANG UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); ELECTRONICS ENGINEERING; MOLECULAR BEAM EPITAXY; NANOELECTRONICS; POLYSILICON;

DEPOSITION TEMPERATURE; DOPING CONCENTRATIONS; FILM STRUCTURES; FILM-THICKNESS; GAUGE FACTORS; MICROSTRUCTURE OF FILMS; NANO-FILMS; PIEZORESISTIVE; PIEZORESISTIVE EFFECTS; TEMPERATURE CHARACTERISTICS; TEMPERATURE CO-EFFICIENT;

GAGES;

EID: 52649135121     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/INEC.2008.4585631     Document Type: Conference Paper

References (8)

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