Response linearity and time drift of polysilicon nanofilm resistance for piezoresistive effect

2008 2nd IEEE International Nanoelectronics Conference, INEC 2008

Volumn , Issue , 2008, Pages 78-82

  Liu, Xiaowei ^a   Shi, Changzhi ^a   Chuai, Rongyan ^a,b   Chen, Weiping ^a   Li, Jinfeng ^a  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b SHENYANG UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Piezoresistive effect; Polysilicon nanofilm; Response linearity; Time drift; Trap model

Indexed keywords

CONCENTRATION (PROCESS); CRYSTAL GROWTH; ELECTRONICS ENGINEERING; EVAPORATIVE COOLING SYSTEMS; GAGES; GRAIN BOUNDARIES; LINEARIZATION; NANOELECTRONICS; POLYSILICON; SIGNAL FILTERING AND PREDICTION;

DOPING CONCENTRATIONS; FILM MICROSTRUCTURES; FILM RESISTIVITY; FILM-THICKNESS; GAUGE FACTORS; LOW TEMPERATURE COEFFICIENTS; NANO-FILMS; PIEZO RESISTIVE SENSORS; PIEZORESISTIVE EFFECT; PIEZORESISTIVE EFFECTS; PIEZORESISTIVE PROPERTIES; POLYSILICON NANOFILM; PREPARATION PARAMETERS; RESISTANCE CHANGES; RESPONSE LINEARITY; SENSING APPLICATIONS; TIME DRIFT; TRAP MODEL; TRAP STATES;

MOLECULAR BEAM EPITAXY;

EID: 52649133492     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/INEC.2008.4585441     Document Type: Conference Paper

References (11)

1. J. Y. W. Seto, "The Electronic Properties of polycrystalline silicon films," J. Appl. Phys., vol. 46, no. 12, pp. 5247-5254, December, 1975.
2. M. M. Mandurah, K. C. Saraswat, and T. I. Kamins, "A Model for Conduction in Polycrystalline Silicon-Part I: Theory," IEEE Trans. Electron Devices, vol. 28, no. 10, pp. 1163-1176, October 1981.
3. M. Modreanu, M. Bercu, and C. Cobianu, "Physical properties of polycrystalline silicon films related to LPCVD conditions," Thin Solid Films, vol. 383, pp. 212-215, 2001.
4. P.J. French, "Polysilicon: a versatile material for Microsystems," Sens. and Actuators A, vol. 99, pp. 3-12, 2002.
5. Bin Ai, Hui Shen, Zongcun Liang, Zhi Chen, Guanglin Kong, Xianbo Liao, "Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition," Thin Solid Films, vol. 497, pp. 157-162, 2006.
6. D. Schubert, W. Jenschke, T. Uhlig and F. M. Schmidt, "Piezoresistive Properties of Polycrystalline and Crystalline Silicon Films," Sens. and Actuators, vol. 11, pp. 145-155, 1987.
7. M. Le Berre, P. Kleimann, B. Semmache, D. Barbier and P. Pinard, "Electrical and piezoresistive characterization of boron-doped LPCVD polycrystalline silicon under rapid thermal annealing," Sens. and Actuators A, vol. 54, pp. 700-703, 1996.
8. V. A. Gridchin, V. M. Lubimsky and M. P. Sarina, "Piezoresistive properties of polysilicon films," Sens. and Actuators A, vol. 49, pp. 67-72, 1995.
9. G. Baccarani and B. Ricco, "Transport properties of polycrystalline silicon films," J. Appl. Phys., vol. 49, no. 11, pp. 5565-5570, November 1978.
10. Rongyan Chuai, Xiaowei Liu, Mingxue Huo, Minghao Song, Xilian Wang, and Huiyan Pan, "Influence of Doping Level on the Gauge Factor of Polysilicon Nano-Film," Chinese Journal of Semiconductors, vol. 27, no. 7, pp. 1230-1235, July 2006.
11. Toshiyuki Toriyama and Susumu Sugiyama, "Analysis of Piezoresistance in p-Type Silicon for Mechanical Sensors," J. Microelectromech. Syst., vol. 11, no. 5, pp. 598-604, October 2002.