메뉴 건너뛰기




Volumn 34, Issue 1, 2006, Pages 216-221

Sensitivity enhancement of polysilicon piezo-resistive pressure sensors with phosphorous diffused resistors

Author keywords

Piezoresistive pressure sensor; Polysilicon; Silicon Fusion Bonding; SOI

Indexed keywords


EID: 33744515016     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/34/1/036     Document Type: Article
Times cited : (20)

References (5)
  • 1
    • 0026188346 scopus 로고
    • Piezo-resistive pressure sensors based on polycrystalline silicon
    • 10.1016/0924-4247(91)85020-O 0924-4247 A
    • Mosser V, J Suski, J Goss and E Obermeier 1991 Piezo-resistive pressure sensors based on polycrystalline silicon Sensors Actuators A 28 113-132
    • (1991) Sensors Actuators , vol.28 , Issue.2 , pp. 113-132
    • Mosser, V.1    Suski, J.2    Goss, J.3    Obermeier, E.4
  • 2
    • 0020781157 scopus 로고
    • Temperature sensitivity in silicon Piezo-resistive pressure transducers
    • Kim Sea-Chung and Kensall D Wise 1983 Temperature sensitivity in silicon Piezo-resistive pressure transducers IEEE Trans. Electron Devices EE-30 802-810 N0.7
    • (1983) IEEE Trans. Electron Devices , vol.EE-30 , Issue.7 , pp. 802-810
    • Sea-Chung, K.1    Wise, K.D.2
  • 3
    • 0024664623 scopus 로고
    • Temperature-independent pressure sensors using polycrystalline silicon strain gauges
    • 10.1016/0250-6874(89)80040-X 0250-6874 A
    • Schafer H, V Greeter and R Kobs 1989 Temperature-independent pressure sensors using polycrystalline silicon strain gauges Sensors Actuators A 17 521-527
    • (1989) Sensors Actuators , vol.17 , Issue.3-4 , pp. 521-527
    • Schafer, H.1    Greeter, V.2    Kobs, R.3
  • 4
    • 32044453563 scopus 로고    scopus 로고
    • Effect of doping concentration on the grain boundary trap density and threshold voltage of polycrystalline SOI MOSFETs
    • 0167-9317
    • Daniel R J, K N Bhat, Enakshi Bhattacharya 2005 Effect of doping concentration on the grain boundary trap density and threshold voltage of polycrystalline SOI MOSFETs Microelectronic engineering doi: http://dx.doi.org/10.1016/j.mee.2005.07.089
    • (2005) Microelectronic Engineering
    • Daniel, R.J.1    Bhat, K.N.2    Bhattacharya, E.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.