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Journal of the Electrochemical Society

Volumn 156, Issue 5, 2009, Pages

Effects of fluorine plasma treatment on the electronic structure of plasma-enhanced atomic layer deposition HfO2

(3) Maeng, W J a Son, J Y a Kim, Hyungjun a

a Pohang University of Science and Technology (POSTECH) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CERAMIC CAPACITORS; DIELECTRIC PROPERTIES; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; FLUORINE; HAFNIUM COMPOUNDS; PASSIVATION; PHOTODEGRADATION; PLASMA DEPOSITION; PLASMAS; SEMICONDUCTING ORGANIC COMPOUNDS;

CONDUCTION-BAND OFFSETS; DEFECT PASSIVATIONS; ELECTRICAL PROPERTIES; FLUORINE PLASMAS; GATE OXIDES; NEAR-EDGE X-RAY ABSORPTION FINE STRUCTURES; PLASMA-ENHANCED ATOMIC LAYER DEPOSITIONS; POST-DEPOSITION TREATMENTS; PRE DEPOSITIONS; TREATMENT PROCESS; X-RAY PHOTOEMISSION SPECTROSCOPIES;

STRUCTURAL PROPERTIES;

EID: 63649083660 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3089976 Document Type: Article

Times cited : (10)

References (27)

1
- 33847750682
- H. H. Tseng, P. J. Tobin, E. A. Hebert, S. Kalpat, M. E. Ramon, L. Fonseca, Z. X. Jiang, J. K. Schaeffer, R. I. Hegde, and D. H. Triyoso, Tech. Dig.-Int. Electron Devices Meet., 2005, 696.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2005 , pp. 696
- Tseng, H.H.¹ Tobin, P.J.² Hebert, E.A.³ Kalpat, S.⁴ Ramon, M.E.⁵ Fonseca, L.⁶ Jiang, Z.X.⁷ Schaeffer, J.K.⁸ Hegde, R.I.⁹ Triyoso, D.H.¹⁰

2
- 33847739339
- M. Inoue, S. Tsujikawa, M. Mizutani, K. Nomura, T. Hayashi, K. Shiga, J. Yugami, J. Tsuchimoto, Y. Ohno, and M. A. Y. Yoneda, Tech. Dig.-Int. Electron Devices Meet., 2005, 413.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2005 , pp. 413
- Inoue, M.¹ Tsujikawa, S.² Mizutani, M.³ Nomura, K.⁴ Hayashi, T.⁵ Shiga, K.⁶ Yugami, J.⁷ Tsuchimoto, J.⁸ Ohno, Y.⁹ Yoneda, M.A.Y.¹⁰

3
- 54749138324
- K. Seo, R. Sreenivasan, P. C. McLntyre, and K. C. Saraswat, Tech. Dig.-Int. Electron Devices Meet., 2005, 4.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2005 , pp. 4
- Seo, K.¹ Sreenivasan, R.² McLntyre, P.C.³ Saraswat, K.C.⁴

4
- 34249870836
- W. C. Wu, C. S. Lai, J. C. Wang, J. H. Chen, M. W. Ma, and T. S. Chao, J. Electrochem. Soc., 154, H561 (2007).
- (2007) J. Electrochem. Soc. , vol.154 , pp. 561
- Wu, W.C.¹ Lai, C.S.² Wang, J.C.³ Chen, J.H.⁴ Ma, M.W.⁵ Chao, T.S.⁶

5
- 33947309904
- J.-H. Ha, K.-I. Seo, P. C. McIntyre, K. C. Sarawat, and K. Cho, Appl. Phys. Lett., 90, 112911 (2007).
- (2007) Appl. Phys. Lett. , vol.90 , pp. 112911
- Ha, J.-H.¹ Seo, K.-I.² McIntyre, P.C.³ Sarawat, K.C.⁴ Cho, K.⁵

6
- 0024663207
- P. J. Wright and K. C. Saraswat, IEEE Trans. Electron Devices, 36, 879 (1989).
- (1989) IEEE Trans. Electron Devices , vol.36 , pp. 879
- Wright, P.J.¹ Saraswat, K.C.²

7
- 33845992218
- M. Chang, M. Jo, H. Park, H. Hwang, B. H. Lee, and R. Choi, IEEE Electron Device Lett., 28, 21 (2007).
- (2007) IEEE Electron Device Lett. , vol.28 , pp. 21
- Chang, M.¹ Jo, M.² Park, H.³ Hwang, H.⁴ Lee, B.H.⁵ Choi, R.⁶

8
- 20844461459
- C. S. Lai, W. C. Wu, J. C. Wang, and T. S. Chao, Appl. Phys. Lett., 86, 222905 (2005).
- (2005) Appl. Phys. Lett. , vol.86 , pp. 222905
- Lai, C.S.¹ Wu, W.C.² Wang, J.C.³ Chao, T.S.⁴

9
- 33747485266
- C. S. Lai, W. C. Wu, T. S. Chao, J. H. Chen, J. C. Wang, L.-L. Tay, and N. Rowell, Appl. Phys. Lett., 89, 072904 (2006).
- (2006) Appl. Phys. Lett. , vol.89 , pp. 072904
- Lai, C.S.¹ Wu, W.C.² Chao, T.S.³ Chen, J.H.⁴ Wang, J.C.⁵ Tay, L.-L.⁶ Rowell, N.⁷

10
- 34248577655
- C. S. Lai, K. M. Fan, H. K. Peng, S. J. Lin, C. Y. Lee, and C. F. Ai, Appl. Phys. Lett., 90, 172904 (2007).
- (2007) Appl. Phys. Lett. , vol.90 , pp. 172904
- Lai, C.S.¹ Fan, K.M.² Peng, H.K.³ Lin, S.J.⁴ Lee, C.Y.⁵ Ai, C.F.⁶

11
- 33749991125
- W. Chen, Q.-Q. Sun, S.-J. Ding, D. W. Zhang, and L.-K. Wang, Appl. Phys. Lett., 89, 152904 (2006).
- (2006) Appl. Phys. Lett. , vol.89 , pp. 152904
- Chen, W.¹ Sun, Q.-Q.² Ding, S.-J.³ Zhang, D.W.⁴ Wang, L.-K.⁵

12
- 33749489613
- K. Tse and J. Robertson, Appl. Phys. Lett., 89, 142914 (2006).
- (2006) Appl. Phys. Lett. , vol.89 , pp. 142914
- Tse, K.¹ Robertson, J.²

13
- 34548430525
- W. J. Maeng and H. Kim, Appl. Phys. Lett., 91, 092901 (2007).
- (2007) Appl. Phys. Lett. , vol.91 , pp. 092901
- Maeng, W.J.¹ Kim, H.²

14
- 33646896298
- J. Park, T. J. Park, M. Cho, S. K. Kim, S. H. Hong, J. H. Kim, M. Seo, C. S. Hwang, J. Y. Won, R. Jeong, J. Appl. Phys., 99, 094501 (2006).
- (2006) J. Appl. Phys. , vol.99 , pp. 094501
- Park, J.¹ Park, T.J.² Cho, M.³ Kim, S.K.⁴ Hong, S.H.⁵ Kim, J.H.⁶ Seo, M.⁷ Hwang, C.S.⁸ Won, J.Y.⁹ Jeong, R.¹⁰

15
- 33749478240
- K.-I. Seo, D.-I. Lee, P. Pianetta, H. Kim, K. C. Saraswat, and P. C. McIntyre, Appl. Phys. Lett., 89, 142912 (2006).
- (2006) Appl. Phys. Lett. , vol.89 , pp. 142912
- Seo, K.-I.¹ Lee, D.-I.² Pianetta, P.³ Kim, H.⁴ Saraswat, K.C.⁵ McIntyre, P.C.⁶

16
- 14644431819
- S. Duenas, H. Castan, H. Garcia, J. Barbolla, K. Kukli, J. Aarik, M. Ritala, and M. Leskela, Microelectron. Reliab., 45, 949 (2005).
- (2005) Microelectron. Reliab. , vol.45 , pp. 949
- Duenas, S.¹ Castan, H.² Garcia, H.³ Barbolla, J.⁴ Kukli, K.⁵ Aarik, J.⁶ Ritala, M.⁷ Leskela, M.⁸

17
- 28844507948
- S. Chatterjee, Y. Kuo, J. Lu, J. Y. Tewg, and P. Majhi, Microelectron. Reliab., 46, 69 (2006).
- (2006) Microelectron. Reliab. , vol.46 , pp. 69
- Chatterjee, S.¹ Kuo, Y.² Lu, J.³ Tewg, J.Y.⁴ Majhi, P.⁵

18
- 4544280497
- S. Duenas, H. Castan, H. Garcia, J. Barbolla, K. Kukli, J. Aarik, and A. Aidla, Semicond. Sci. Technol., 19, 1141 (2004).
- (2004) Semicond. Sci. Technol. , vol.19 , pp. 1141
- Duenas, S.¹ Castan, H.² Garcia, H.³ Barbolla, J.⁴ Kukli, K.⁵ Aarik, J.⁶ Aidla, A.⁷

19
- 21244471082
- C. S. Lai, W. C. Wu, K. M. Fan, J. C. Wang, and S. J. Lin, Jpn. J. Appl. Phys., Part 1, 44, 2307 (2005).
- (2005) Jpn. J. Appl. Phys., Part 1 , vol.44 , pp. 2307
- Lai, C.S.¹ Wu, W.C.² Fan, K.M.³ Wang, J.C.⁴ Lin, S.J.⁵

20
- 17944369303
- M. Cho, D. S. Jeong, J. Park, H. B. Park, S. W. Lee, T. J. Park, C. S. Hwang, G. H. Jang, and J. Jeong, Appl. Phys. Lett., 85, 5953 (2004).
- (2004) Appl. Phys. Lett. , vol.85 , pp. 5953
- Cho, M.¹ Jeong, D.S.² Park, J.³ Park, H.B.⁴ Lee, S.W.⁵ Park, T.J.⁶ Hwang, C.S.⁷ Jang, G.H.⁸ Jeong, J.⁹

21
- 34548632610
- G. Lucovsky, H. Seo, L. B. Fleming, J. Luning, P. Lysaght, and G. Bersuker, Surf. Sci., 601, 4236 (2007).
- (2007) Surf. Sci. , vol.601 , pp. 4236
- Lucovsky, G.¹ Seo, H.² Fleming, L.B.³ Luning, J.⁴ Lysaght, P.⁵ Bersuker, G.⁶

22
- 31744439912
- Springer, New York.
- H. R. Huff and D. C. Gilmer, High Dielectric Constant Materials: VLSI MOSFET Applications, Springer, New York (2005).
- (2005) High Dielectric Constant Materials: VLSI MOSFET Applications
- Huff, H.R.¹ Gilmer, D.C.²

23
- 4544299449
- O. Renault, N. T. Barrett, D. Samour, and S. Quiais-Marthon, Surf. Sci., 566, 526 (2004).
- (2004) Surf. Sci. , vol.566 , pp. 526
- Renault, O.¹ Barrett, N.T.² Samour, D.³ Quiais-Marthon, S.⁴

24
- 34047264993
- Q.-Q. Sun, W. Chen, S.-J. Ding, M. Xu, H.-L. Lu, H.-C. Lindh-Rengifo, D. W. Zhang, and L.-K. Wang, Appl. Phys. Lett., 90, 142904 (2007).
- (2007) Appl. Phys. Lett. , vol.90 , pp. 142904
- Sun, Q.-Q.¹ Chen, W.² Ding, S.-J.³ Xu, M.⁴ Lu, H.-L.⁵ Lindh-Rengifo, H.-C.⁶ Zhang, D.W.⁷ Wang, L.-K.⁸

25
- 0036573608
- A. S. Foster, F. L. Gejo, A. L. Shluger, and R. M. Nieminen, Phys. Rev. B, 65, 174117 (2002).
- (2002) Phys. Rev. B , vol.65 , pp. 174117
- Foster, A.S.¹ Gejo, F.L.² Shluger, A.L.³ Nieminen, R.M.⁴

26
- 35148872144
- D.-Y. Cho, J.-M. Lee, S. J. Oh, H. Jang, J. Y. Kim, J. H. Park, and A. Tanaka, Phys. Rev. B, 76, 165411 (2007).
- (2007) Phys. Rev. B , vol.76 , pp. 165411
- Cho, D.-Y.¹ Lee, J.-M.² Oh, S.J.³ Jang, H.⁴ Kim, J.Y.⁵ Park, J.H.⁶ Tanaka, A.⁷

27
- 36148953562
- W. C. Wu, C. S. Lai, T. M. Wang, J. C. Wang, C. W. Hsu, M. W. Ma, and T. S. Chao, Electrochem. Solid-State Lett., 11, H15 (2008).
- (2008) Electrochem. Solid-State Lett. , vol.11 , pp. 15
- Wu, W.C.¹ Lai, C.S.² Wang, T.M.³ Wang, J.C.⁴ Hsu, C.W.⁵ Ma, M.W.⁶ Chao, T.S.⁷

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