Influence of the oxygen concentration of atomic-layer-deposited HfO 2 gate dielectric films on the electron mobility of polycrystalline-Si gate transistors

Journal of Applied Physics

Volumn 99, Issue 9, 2006, Pages

  Park, Jaehoo ^c   Park, Tae Joo ^c   Cho, Moonju ^c   Kim, Seong Keun ^c   Hong, Sug Hun ^c   Kim, Jeong Hwan ^c   Seo, Minha ^c   Hwang, Cheol Seong ^c   Won, Jeong Yeon ^a   Jeong, Ranju ^a   Choi, Jung Hae ^b  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); ELECTRON MOBILITY; GATES (TRANSISTOR); MOSFET DEVICES; OXYGEN; OZONE; POLYCRYSTALLINE MATERIALS;

GATE DIELECTRICS; HF O2; INTERFACE TRAP DENSITY; POLYCRYSTALLINE-SI ELECTRODE;

DIELECTRIC FILMS;

EID: 33646896298     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2193163     Document Type: Article

References (22)

1. R. Degraeve, A. Kerber, E. Cartier, L. Pantisano, and G. Groeseneken, Proceedings of the 2003 International Semiconductor Device Research Symposium, 2003 (unpublished), p. 322.
2. A. Shanware, M. R. Visokay, J. J. Chambers, A. L. P. Rotondaro, J. McPherson, and L. Colombo, Tech. Dig. - Int. Electron Devices Meet. 2003, 939.
3. L. Kang et al., Tech. Dig. - Int. Electron Devices Meet. 2000, 35.
4. M. Cho et al., Appl. Phys. Lett. 85, 5953 (2004).
5. J. Park, M. Cho, S. K. Kim, T. J. Park, S. W. Lee, S. H. Hong, and C. S. Hwang, Appl. Phys. Lett. 86, 112907 (2005).
6. S. K. Kim and C. S. Hwang, J. Appl. Phys. 96, 2323 (2004).
7. D. K. Schroeder, Semiconductor Material and Device Characterization (Wiley, New York, 1998), p. 373.
8. M. Cho, J. Park, H. B. Park, S. W. Lee, T. J. Park, C. S. Hwang, G. H. Jang, and J. Jeong, Appl. Phys. Lett. 85, 5953 (2004).
9. S. W. Lee et al., Electrochem. Solid-State Lett. 8, F32 (2005).
10. T. Hori, Gate Dielectrics and MOS ULSIs: Principles, Technologies, and Applications (Springer, Berlin, 1997), pp. 160 and 162.
11. F. J. Gruntharner, P. J. Gruntharner, R. P. Vasquez, B. F. Lewis, J. Maserjian, and A. Madhukar, Phys. Rev. Lett. 43, 1683 (1979).
12. K. Nakamura, S. Ichmura, A. Kurokawa, K. Koike, G. Inoue, and T. Fukuda, J. Vac. Sci. Technol. A 17, 1275 (1999).
13. J. H. Oh et al., Phys. Rev. B 63, 205310 (2001).
14. O. Renault, D. Samour, J.-F. Damlencourt, D. Blin, F. Martin, S. Marthon, N. T. Barrett, and P. Besson, Appl. Phys. Lett. 81, 3627 (2002).
15. J. C. Lee and S. J. Lee, Appl. Phys. Lett. 84, 3561 (2004).
16. R. S. Johnson, G. Lucovsky, and I. Baumvol, J. Vac. Sci. Technol. A 19, 1353 (2001).
17. T. Hori, Gate Dielectrics and MOS ULSIs: Principles, Technologies, and Applications (Springer, Berlin, 1997), pp. 236 and 239.
18. T. Hori, Gate Dielectrics and MOS ULSIs: Principles, Technologies, and Applications (Springer, Berlin, 1997), p. 101.
19. L.-Å. Ragnarsson, L. Pantisano, V. Kaushik, S.-I. Saito, Y. Shimamoto, S. De Gendt, and M. Heyns, Tech. Dig. - Int. Electron Devices Meet. 2003, 87.
20. Z. Ren, M. V. Fischetti, E. P. Gusev, E. A. Cartier, and M. Chudzik, Tech. Dig. - Int. Electron Devices Meet. 2003, 793.
21. F. Kime, K. Oshima, M. Casś, G. Ghibaudo, S. Cristolobeanu, B. Guillaumot, and H. Iwai, Solid-State Electron. 47, 1617 (2003).
22. M. V. Fischetti, D. A. Neumayer, and E. A. Cartier, J. Appl. Phys. 90, 4587 (2001).