Current transport mechanism for HfO2 gate dielectrics with fluorine incorporation

Electrochemical and Solid-State Letters

Volumn 11, Issue 1, 2008, Pages

  Wu, Woei Cherng ^a   Lai, Chao Sung ^a   Wang, Tzu Ming ^a   Wang, Jer Chyi ^b   Hsu, Chih Wei ^c   Ma, Ming Wen ^c   Chao, Tien Sheng ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b CHANG GUNG UNIVERSITY   (Taiwan)

^c NANYA TECHNOLOGY CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; FIELD EMISSION; FLUORINATION; FLUORINE COMPOUNDS; LEAKAGE CURRENTS;

CONDUCTION BAND; FRENKEL-POOLE CONDUCTION; GATE LEAKAGE CURRENTS; INTERFACIAL LAYER (IL);

GATE DIELECTRICS;

EID: 36148953562     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2805079     Document Type: Article

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