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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2307-2310

Effects of post CF4 plasma treatment on the HfO2 thin film

(5) Lai, Chao Sung a Wu, Woei Cherng b Fan, Kung Ming a Wang, Jer Chyi c Lin, Shian Jyh c

a CHANG GUNG UNIVERSITY (Taiwan)

b NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

c NANYA TECHNOLOGY CORPORATION (Taiwan)

Author keywords

CF4 plasma; Fluorine; HfO2; Hysteresis

Indexed keywords

CAPACITANCE; DIELECTRIC PROPERTIES; ELECTRIC POTENTIAL; FLUORINE; HAFNIUM COMPOUNDS; HYSTERESIS; LEAKAGE CURRENTS; PLASMA APPLICATIONS; PLASMAS; SECONDARY ION MASS SPECTROMETRY; SILICON;

CARRIER TRAPPING; CF4 PLASMAS; HFO2; PLASMA TREATMENT;

THIN FILMS;

EID: 21244471082 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.44.2307 Document Type: Conference Paper

Times cited : (16)

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