High-performance HfO2 gate dielectrics fluorinated by postdeposition CF4 plasma treatment

Journal of the Electrochemical Society

Volumn 154, Issue 7, 2007, Pages

  Wu, Woei Cherng ^a   Lai, Chao Sung ^a   Wang, Jer Chyi ^b   Chen, Jian Hao ^c   Ma, Ming Wen ^c   Chao, Tien Sheng ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b CHANG GUNG UNIVERSITY   (Taiwan)

^c NANYA TECHNOLOGY CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

FLUORINE; HAFNIUM COMPOUNDS; HYSTERESIS; LEAKAGE CURRENTS; PLASMAS; THIN FILMS;

CAPACITANCE-VOLTAGE HYSTERESIS; INTERFACIAL LAYER THICKNESS; PLASMA TREATMENT; POSTDEPOSITION;

GATE DIELECTRICS;

EID: 34249870836     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2733873     Document Type: Article

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