Room-temperature continuous-wave operation of GaN-based laser diodes grown by raised-pressure metalorganic chemical vapor deposition

Journal of Electronic Materials

Volumn 28, Issue 3, 1999, Pages 287-289

  Yanashima, Katsunori ^a   Hashimoto, Shigeki ^a   Hino, Tomonori ^a   Funato, Kenji ^a   Kobayashi, Toshimasa ^a   Naganuma, Kaori ^a   Tojyo, Tsuyoshi ^a   Asano, Takeharu ^a   Asatsuma, Tsunenori ^a   Miyajima, Takao ^a   Ikeda, Masao ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; OPTICAL PUMPING; PRESSURE EFFECTS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; THRESHOLD VOLTAGE;

GALLIUM NITRIDE; RAISED-PRESSURE METALORGANIC CHEMICAL VAPOR DEPOSITION (RP-MOCVD);

SEMICONDUCTOR LASERS;

EID: 0032673458     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0028-8     Document Type: Article

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