MBE grown high-quality Gd2O3/Si(1 1 1) hetero-structure

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 386-389

  Lin, T D ^a   Hang, M C ^a   Hsu, C H ^b   Kwo, J ^a   Hong, M ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

Author keywords

A3. MBE; A3. Thin film epitaxial growth; B1. Gd2O3; B1. Silicate; B2. Si

Indexed keywords

CRYSTAL LATTICES; EPITAXIAL GROWTH; GADOLINIUM COMPOUNDS; HIGH ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; X RAY DIFFRACTION ANALYSIS;

ATOMICALLY SHARP INTERFACES; CRYSTAL TRUNCATION; CRYSTALLINITY; INTERFERENCE FRINGES;

HETEROJUNCTIONS;

EID: 33947310732     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.116     Document Type: Article

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