Growth and structural characteristics of GaN/AIN/nanothick γ-Al 2O3/Si(111)

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 3, 2008, Pages 1064-1067

  Lee, W C ^a   Lee, Y J ^a   Tung, L T ^a   Wu, S Y ^a   Lee, C H ^a   Hong, M ^a   Ng, H M ^b   Kwo, J ^a   Hsu, C H ^c,d  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b LUCENT TECHNOLOGIES   (United States)

^c NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^d NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CROSS-SECTIONAL MEASUREMENTS; HIGH-RESOLUTION X-RAY DIFFRACTION; NANOTHICK; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY;

BUFFER LAYERS; ELECTRONIC STRUCTURE; GROWTH RATE; MOLECULAR BEAM EPITAXY; SINGLE CRYSTALS; X RAY DIFFRACTION;

THICK FILMS;

EID: 44649131233     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2905241     Document Type: Article

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