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Volumn 311, Issue 7, 2009, Pages 1739-1744
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Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy
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Author keywords
A1. Interfaces; A3. Molecular beam epitaxy; A3. Quantum wells; A3. Superlattices; B2. Semiconducting III V materials
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Indexed keywords
CRYSTAL GROWTH;
CRYSTALS;
ELECTRIC CONDUCTIVITY;
GALLIUM ALLOYS;
HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;
MATERIALS SCIENCE;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
MOLECULAR DYNAMICS;
SEMICONDUCTOR MATERIALS;
SEMICONDUCTOR QUANTUM WIRES;
WELLS;
A1. INTERFACES;
A3. MOLECULAR BEAM EPITAXY;
A3. QUANTUM WELLS;
A3. SUPERLATTICES;
B2. SEMICONDUCTING III-V MATERIALS;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 63349093933
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.10.039 Document Type: Article |
Times cited : (26)
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References (23)
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