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Volumn 311, Issue 7, 2009, Pages 1739-1744

Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy

Author keywords

A1. Interfaces; A3. Molecular beam epitaxy; A3. Quantum wells; A3. Superlattices; B2. Semiconducting III V materials

Indexed keywords

CRYSTAL GROWTH; CRYSTALS; ELECTRIC CONDUCTIVITY; GALLIUM ALLOYS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MATERIALS SCIENCE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WIRES; WELLS;

EID: 63349093933     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.10.039     Document Type: Article
Times cited : (26)

References (23)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.