Nitrogen-enhanced indium segregation in (Ga,In)(N,As)/GaAs multiple quantum wells grown by molecular-beam epitaxy

New Journal of Physics

Volumn 9, Issue , 2007, Pages

  Luna, E ^a   Trampert, A ^a   Pavelescu, E M ^b,c   Pessa, M ^b  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^c UNIVERSITY OF KASSEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; NITROGEN; SEGREGATION (METALLOGRAPHY); SEMICONDUCTOR QUANTUM WELLS;

INDIUM SEGREGATION; LOCAL DISTRIBUTIONS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 36048932475     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/9/11/405     Document Type: Article

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