Critical parameters for the molecular beam epitaxial growth of 1.55 μm (Ga,In)(N,As) multiple quantum wells

Applied Physics Letters

Volumn 89, Issue 18, 2006, Pages

  Ishikawa, Fumitaro ^a   Luna, Esperanza ^a   Trampert, Achim ^a   Ploog, Klaus H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

BEAM EQUIVALENT PRESSURE (BEP); COMPOSITION MODULATIONS; MULTIPLE QUANTUM WELLS (MQW);

MOLECULAR BEAM EPITAXY;

EID: 33750694278     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2372760     Document Type: Article

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