Correlation between interface structure and light emission at 1.3-1.55 μm of (Ga,In)(N,As) diluted nitride heterostructures on GaAs substrates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 4, 2004, Pages 2195-2200

  Trampert, Achim ^a   Chauveau, Jean Michel ^a   Ploog, Klaus H ^a   Tournié, Eric ^b   Guzmán, Alvaro ^c  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b UNIV MONTPELLIER   (France)

^c UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE COUPLED DEVICES; DIFFUSION; GALLIUM NITRIDE; IMAGE PROCESSING; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPIC ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

INTERFACE ROUGHNESS; INTERFACE STRUCTURES; MORPHOLOGIAL INSTABILITIES; PHOTOLUMINESCENCE SPECTROSCOPY;

HETEROJUNCTIONS;

EID: 5044226230     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1775197     Document Type: Conference Paper

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