Correlation between the performance of double-barrier quantum-well infrared photodetectors and their microstructure: On the origin of the photovoltaic effect

Journal of Applied Physics

Volumn 98, Issue 4, 2005, Pages

  Luna, E ^a,b   Trampert, A ^b   Guzman A ^a   Calleja, E ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRO-OPTICAL RESPONSE; QUANTUM-WELL INFRARED PHOTODETECTORS; SILICON SEGREGATION; TUNNEL BARRIERS;

IMAGE ANALYSIS; MICROSTRUCTURE; PHOTOVOLTAIC EFFECTS; SEMICONDUCTOR QUANTUM WELLS; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

PHOTODETECTORS;

EID: 25144473981     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2006990     Document Type: Article

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