Molecular beam epitaxial growth window for high-quality (Ga,In)(N,As) quantum wells for long wavelength emission

Applied Physics Letters

Volumn 88, Issue 19, 2006, Pages

  Ishikawa, Fumitaro ^a   Höricke, Michael ^a   Jahn, Uwe ^a   Trampert, Achim ^a   Ploog, Klaus H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); LASER APPLICATIONS; MOLECULAR BEAM EPITAXY;

LOW SUBSTRATE TEMPERATURE; MULTIPLE QUANTUM WELL STRUCTURES; PRESSURE RATIO; QUANTUM WELL WIDTH;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33646682591     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2202113     Document Type: Article

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