Indium distribution at the interfaces of (Ga,In) (N,As) GaAs quantum wells

Applied Physics Letters

Volumn 92, Issue 14, 2008, Pages

  Luna, E ^a   Ishikawa, F ^a,b   Batista, P D ^a,c   Trampert, A ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b OSAKA UNIVERSITY   (Japan)

^c UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM; INTERFACES (MATERIALS); TRANSMISSION ELECTRON MICROSCOPY;

INDIUM DISTRIBUTION; MURAKI'S SEGREGATION MODEL;

SEMICONDUCTOR QUANTUM WELLS;

EID: 42149130380     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2907508     Document Type: Article

References (18)

1. M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, and Y. Yazawa, Jpn. J. Appl. Phys., Part 1 35, 1273 (1996).
2. J. S. Harris, Semicond. Sci. Technol. 17, 880 (2002).
3. J. Neugebauer and C. Van de Walle, Phys. Rev. B 51, 10568 (1995).
4. I. Ho and G. B. Stringfellow, J. Cryst. Growth 178, 1 (1997).
5. A. Trampert, J.-M. Chauveau, K. H. Ploog, E. Tourní, and A. Guzmán, J. Vac. Sci. Technol. B 22, 2195 (2004).
6. E. Tourní and B. Gil, Low-Dimensional Nitride Semiconductors, edited by, B. Gil, (Oxford University Press, London, 2002), pp. 415-455.
7. G. Jaschke, R. Averbeck, L. Geelhaar, and H. Riechert, J. Cryst. Growth 278, 224 (2005).
8. K. Muraki, S. Fukatsu, Y. Shiraki, and R. Ito, Appl. Phys. Lett. 61, 557 (1992).
9. F. Ishikawa, M. Höricke, U. Jahn, A. Trampert, and K. H. Ploog, Appl. Phys. Lett. 88, 191115 (2006).
10. F. Ishikawa, E. Luna, A. Trampert, and K. H. Ploog, Appl. Phys. Lett. 89, 181910 (2006).
11. V. Grillo, M. Albrecht, T. Remmele, H. P. Strunk, A. Y. Egorov, and H. Riechert, J. Appl. Phys. 90, 3792 (2001).
12. E. Luna, A. Trampert, E.-M. Pavelescu, and M. Pessa, New J. Phys. 9, 405 (2007).
13. E. Piscopiello, A. Rosenauer, A. Passaseo, E. H. Montoya Rossi, and G. Van Tendeloo, Philos. Mag. 85, 3857 (2005), and references therein.
14. J.-M. Chauveau, A. Trampert, K. H. Ploog, and E. Tourní, Appl. Phys. Lett. 84, 2503 (2004).
15. H. F. Liu, V. Dixit, and N. Xiang, J. Appl. Phys. 100, 083518 (2006).
16. L. Zheng, J. Chem. Phys. 0021-9606 10.1063/1.2790424 127, 164503 (2007); G. D. Lian, Appl. Phys. Lett. 0003-6951 10.1063/1.1577825 82, 3656 (2003); S. G. Patterson, J. Electron. Mater. 28, 1081 (1999).
17. H. Temkin, S. N. G. Chu, M. B. Panish, and R. A. Logan, Appl. Phys. Lett. 50, 956 (1987).
18. R. M. Cohen, J. Appl. Phys. 73, 4903 (1993).