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Journal of Crystal Growth

Volumn 274, Issue 1-2, 2005, Pages 6-13

MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detection

(5) Rodriguez, J B a Christol, P a Cerutti, L a Chevrier, F a Joullie A a

a UNIVERSITÉ MONTPELLIER II (France)

Author keywords

A3. Molecular beam epitaxy; A3. Superlattices; B1. Antimonides; B3. Mid infrared detector

Indexed keywords

ANTIMONIDES; MID-INFRARED DETECTOR; MID-INFRARED WAVELENGTH RANGE (MWIR); PHOTODETECTOR BULK MATERIALS;

DOPING (ADDITIVES); HETEROJUNCTIONS; INFRARED IMAGING; MOLECULAR BEAM EPITAXY; OPTIMIZATION; PHOTODIODES; PHOTOVOLTAIC CELLS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SUPERLATTICES;

INDIUM COMPOUNDS;

EID: 11144314821 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.09.088 Document Type: Article

Times cited : (102)

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