Recent Progress on 1.55-μm dilute-nitride lasers

IEEE Journal of Quantum Electronics

Volumn 43, Issue 9, 2007, Pages 773-785

  Bank, Seth R ^a   Bae, Hopil ^b   Goddard, Lynford L ^c   Yuen, Homan B ^d   Wistey, Mark A ^e   Kudrawiec, Robert ^f   Harris Jr , James S ^b  

^a The University of Texas at Austin   (United States)

^b STANFORD UNIVERSITY   (United States)

^c LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^d Translucent Inc   (United States)

^e UNIVERSITY OF CALIFORNIA   (United States)

^f WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

1.55 m; Annealing; Auger recombination; Continuous wave (cw); Dilute nitride; Gainnas; Gainnassb; Gallium arsenide; Ganas, ingaasn; Intervalence band absorption; Molecular beam epitaxy (mbe); Optical communications; Semiconductor laser

Indexed keywords

AUGER RECOMBINATION; CONTINUOUS WAVES; DILUTE NITRIDES; GAINNAS; GAINNASSB; INGAASN; INTERVALENCE BAND ABSORPTION; MOLECULAR BEAM EPITAXY (MBE);

ABSORPTION; ANNEALING; AUGERS; CRYSTAL GROWTH; GALLIUM ALLOYS; LASERS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NITRIDES; NITROGEN PLASMA; NITROGEN REMOVAL; OPTICAL COMMUNICATION; PHOTONICS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; SURFACE EMITTING LASERS;

GALLIUM ARSENIDE;

EID: 40749103092     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2007.902301     Document Type: Review

References (93)

1. M. Weyers, M. Sato, and H. Ando, "Red shift of photoluminescence and absorption in dilute GaAsN alloy layers," Jpn. J. Appl. Phys., vol. 31, no. 7A, pp. L853-L855, Jul. 1992.
2. M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, and Y. Yazawa, "GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance," Jpn. J. Appl. Phys., vol.35, pp. 1273-1275, Feb. 1996.
3. M. Kondow, T. Kitatani, S. Nakatsuka, M. C. Larson, K. Nakahara, Y. Yazawa, M. Okai, and K. Uomi, "GaInNAs: A novel material for longwavelength semiconductor lasers," IEEE J. Sel Top. Quantum Electron., vol.3, no.6, pp. 719-730, Jun. 1997.
4. N. Tansu, J. Y. Yeh, and L. J. Mawst, "High-performance 1200-nm InGaAs and 1300-nm InGaAsN quantum-well lasers by metalorganic chemical vapor deposition," IEEE J. Sel Top. Quantum Electron., vol.9, no.3, pp. 1220-1227, Sept.-Oct. 2003.
5. H. Riechert, A. Y. Egorov, D. Livshits, B. Borchert, and S. Illek, "InGaAsN-GaAs heterostructures for long-wavelength light-emitting devices," Nanotechnology, vol.11, pp. 201-205, 2000.
6. T. Miyamoto and F. Koyama, "GaInNAs based laser diodes grown by MOVPE," presented at the 11th Int. Conf. Metalorganic Vapor Phase Epitaxy (ICMOVPE XI), Berlin, Germany, Jun. 2002, paper Tue-A1.
7. C. W. Coldren, M. C. Larson, S. G. Spruytte, and J. S. Harris, "1200 nm GaAs based vertical cavity lasers employing GaInNAs multiple quantum well active regions," Electron. Lett., vol.36, pp. 951-952, 2000.
8. A. W. Jackson, R. L. Naone, M. J. Dalberth, J. M. Smith, K. J. Malone, D. W. Kisker, J. F. Klem, K. D. Choquette, D. K. Serkland, and K. M. Geib, "OC-48 capable InGaAsN vertical cavity lasers," Electron. Lett., vol.37, pp. 355-356, 2001. (Pubitemid 32321799)
9. W. W. Chow, K. D. Choquette, M. H. Crawford, K. L. Lear, and G. R. Hadley, "Design, fabrication, and performance of infrared and visible vertical-cavity surface-emitting lasers," IEEE J. Quantum Electron., vol.33, no.10, pp. 1810-1824, Oct. 1997.
10. G. Boehm, M. Ortsiefer, R. Shau, J. Rosskopf, C. Lauer, M. Maute, F. Kohler, F. Mederer, R. Meyer, and M. C. Amann, "InP-based VCSEL technology covering the wavelength range from. 1.3 to 2.0 μm," J. Cryst. Growth, vol.251, pp. 748-753, 2003.
11. T. Asano, D. Feezell, R. Koda, M. Reddy, D. Buell, A. Huntington, E. Hall, S. Nakagawa, and L. A. Coldren, "InP-based all-epitaxial 1.3-μm VCSELS with selectively etched AlInAs apertures and Sb-based DBRs," IEEE Photon. Technol. Lett., vol.15, no.10, pp. 1333-1335, Oct. 2003.
12. N. M. Margalit, K. A. Black, Y. J. Chin, E. R. Hegblom, K. Streubel, P. Abraham, M. Anzlowar, J. E. Bowers, and E. L. Hu, "Top-emitting double fused 1.5 μm vertical cavity lasers," Electron. Lett., vol.34, no.3, pp. 285-287, 1998.
13. G. Jaschke, R. Averbeck, L. Geelhaar, and H. Riechert, "Low threshold InGaAsN-GaAs lasers beyond 1500 nm," J. Cryst. Growth, vol.275, pp. 224-228, 2005.
14. S. Sato and S. Satoh, "Room-temperature continuous-wave operation of 1.24- μm GaInNAs lasers grown by metal-organic chemical vapor deposition," IEEE J. Sel. Topics Quantum Electron., vol.5, no.3, pp. 707-710, May/Jun. 1999.
15. V. Gambin, W. Ha, M. Wistey, H. Yuen, S. R. Bank, S. M. Kim, and J. S. Harris, Jr., "GaInNAsSb for .1.3-1.6 m long wavelength lasers grown by molecular beam epitaxy," IEEE J. Se. Topics Quantum Electron., vol.8, no.4, pp. 795-800, Jul.-Aug. 2002.
16. J. Y. Yeh, N. Tansu, and L. J. Mawst, "Temperature-sensitivity analysis of 1360-nm dilute-nitride quantum-well lasers," IEEE Photon. Technol. Lett., vol.16, no.3, pp. 741-743, Mar. 2004.
17. X. Yang, M. J. Jurkovic, J. B. Heroux, and W. I. Wang, "Molecular beam epitaxial growth of InGaAsN:Sb-GaAs quantum wells for long-wavelength semiconductor lasers," Appl. Phys. Lett., vol.75, pp. 178-180, Jul. 1999.
18. H. Shimizu, K. Kumada, S. Uchiyama, and A. Kasukawa, "High performance CW 1.26 μm GaInNAsSb-SQW and 1.20 μm GaInAsSb-SQW ridge lasers," Electron. Lett., vol.36, pp. 1701-1703, Sep. 2000.
19. J. Massies and N. Grandjean, "Surfactant effect on the surface diffusion length in epitaxial growth," Phys. Rev. B, vol.48, pp. 8502-8505, 1993.
20. E. Tournie, N. Grandjean, A. Trampert, J. Massies, and K. H. Ploog, "Surfactant-mediated molecular-beam epitaxy of III-V strained-layer heterostructures," 7. Cryst. Growth, vol.150, pp. 460-466, 1995.
21. S. R. Bank, H. B. Yuen, M. A. Wistey, V. Lordi, H. P. Bae, and J. S. Harris, "Effects of growth temperature on the structural and optical properties of 1.55 μm GaInNAsSb quantum wells grown on GaAs," Appl. Phys. Lett., vol.87, p. 021908, Jun. 2005.
22. G. B. Stringfellow, Organometallic Vapor-Phase Eptiaxy: Theory and Practice. Boston, MA: Academic, 1989.
23. S. R. Bank, M. A. Wistey, L. L. Goddard, H. B. Yuen, H. P. Bae, and J. S. Harris, "High-performance 1.5 μm GaInNAsSb lasers on GaAs," Electron. Lett., vol.40, no.19, pp. 1186-1187, Sep. 2004.
24. M. A. Wistey, S. R. Bank, H. B. Yuen, J. S. Harris, M. M. Oye, and A. L. Holmes, Jr., "Using beam flux monitor as Langmuir probe for plasma-assisted molecular beam epitaxy," J. Vac. Sci. Technol. A, vol.23, no.3, pp. 460-464, 2005.
25. x alloys," Phys. Rev. B, vol.51, pp. 10568-10571, 1995.
26. I. H. Ho and G. B. Stringfellow, "Solubility of nitrogen in binary III-V systems," J. Cryst. Growth, vol.178, pp. 1-7, 1997.
27. x solid solutions," Appl. Phys. Lett., vol.70, pp. 2831-2833, 1997.
28. D. Jahan, G. Patriarche, V. Sallet, and J. C. Harmand, "Further insight into the growth temperature influence of 1.3 μm. GaInNAs-GaAs QWs on their properties," Proc. IEE Optoelectronics, vol.151, no.5, pp. 279-283, 2004.
29. M. Herreral, D. González, M. Hopkinson, P. Navaretti, M. Gutiérrez, H. Y. Liu, and R. García, "Influence of growth temperature on the structural and optical quality of GaInNAs-GaAs multi-quantum, wells," Semicond. Sci. Technol., vol.19, no.7, pp. 813-818, 2004.
30. S. G. Spruytte, C. W. Coldren, A. F. Marshall, M. C. Larson, and J. S. Harris, "MBE growth of nitride-arsenide materials for long wavelength optoelectronics," in Proc. Mat. Res. Symp., 2000, vol.595, pp. W8.4.1-W8.4.6.
31. S. G. Spruytte, M. C. Larson, W. Wampler, C. W. Coldren, H. E. Peterson, and J. S. Harris, "Nitrogen incorporation in group III-nitride-arsenide materials grown by elemental source molecular beam epitaxy," J. Cryst. Growth, vol.227-228, pp. 506-515, Jul. 2001.
32. P. D. Brewer, D. H. Chow, and R. H. Miles, "Atomic antimony for molecular beam epitaxy of high quality III-V semiconductor alloys," J. Vac. Sci. Technol. B, vol.14, no.3, pp. 2335-2338, 1996.
33. 1-x As epilayers during ambient transfer," J. Vac. Sci. Technol., vol.19, no.2, pp. 255-256, 1981.
34. M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, T. Gugov, and J. S. Harris, "Protecting wafer surface during plasma ignition using an arsenic cap," J. Vac. Sci. Technol. B, vol.23, pp. 1324-1327, 2005.
35. R. Fehse, S. Tomic, A. R. Adams, S. J. Sweeney, E. P. O'Reilly, A. Andreev, and H. Riechert, "A quantitative study of radiative, Auger, and defect related recombination processes in 1.3- μm GaInNAs-based quantum-well lasers," IEEE J. Sel. Top. Quantum Electron., vol.8, no.4, pp. 801-810, Jul./Aug. 2002.
36. L. L. Goddard, S. R. Bank, M. A. Wistey, H. B. Yuen, Z. Rao, and J. S. Harris, "Recombination, gain, band structure, efficiency, and reliability of 1.5- μm GaInNAsSb-GaAs lasers," J. Appl. Phys., vol.97, p. 083101, 2005.
37. x with high nitrogen concentration by MOMBE," Appl. Phys. Lett., vol.70, pp. 3242-3244, 1997.
38. 1-x studied by optically detected magnetic resonance," Appl. Phys. Lett., vol.79, no.19, pp. 3089-3091, Nov. 2001.
39. R. Yano, Y. Hirayama, S. Miyashita, N. Uesugi, and S. Uehara, "Arsenic pressure dependence of carrier lifetime and annealing dynamics for low-temperature grown GaAs studied by pump-probe spectroscopy," J. Appl. Phys., vol.94, no.6, pp. 3966-3971, Sep. 2003.
40. P. Gilet, L. Grenouillet, P. Duvaut, P. Ballet, G. Rolland, C. Vannuffel, and A. Million, "Growth and characterization of GaInNAs-GaAs multiquantum wells,"J. Vac. Sci. Technol. B, vol.19, pp. 1422-1425, 2001.
41. E.-M. Pavelescu, T. Hakkarainen, V. D. S. Dhaka, N. V. Tkachenko, T. Jouhti, H. Lemmetyinen, and M. Pessa, "Influence of arsenic pressure on photoluminescence and structural properties of GaInNAs-GaAs quantum wells grown by molecular beam epitaxy," J. Cryst. Growth, vol.281, pp. 249-254, 2005.
42. H. Y. Liu, C. M. Tey, C. Y. Jin, S. L. Liew, P. Navaretti, M. Hopkinson, and A. G. Cullis, "Effects of growth temperature on the structural and optical properties of 1.6 μm GaInNAs-GaAs multiple quantum wells," Appl. Phys. Lett., vol.88, no.19, p. 191907, May 2006.
43. S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, A. Moto, and J. S. Harris, "Enhanced luminescence in GaInNAsSb quantum wells through variation of the arsenic and antimony gluxes," Appl. Phys. Lett., vol.88, no.24, pp. 231923-1-231923-3, Jun. 2006.
44. H. Shimizu, K. Kumada, S. Uchiyama, and A. Kasukawa, " Highperformance CW 1.26- μm GaInNAsSb-SQW ridge lasers," IEEE J. Sel. Topics Quantum Electron., vol.7, no.2, pp. 355-364, Mar./Apr. 2001.
45. H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, Jr., "The role of antimony on properties of widely varying GaInNAsSb compositions," J. Appl. Phys., vol.99, no.9, pp. 093504-1-093504-8, May 2006.
46. T. Miyamoto, K. Takeuchi, T. Kageyama, F. Koyama, and K. Iga, "Chemical, beam epitaxy of GaInNas-GaAs quantum, wells and its optical absorption property," J. Cryst. Growth, vol.197, pp. 67-72, 1999.
47. J. M. Reifsnider, S. Govindaraju, and A. L. Holmes, "Use of optical emission intensity to characterize an RF plasma source for MBE growth of GaAsN," J. Cryst. Growth, vol.243, pp. 396-403, 2002.
48. H. B. Yuen, M. A. Wistey, S. R. Bank, H. P. Bae, and J. S. Harris, Jr., "An investigation of nitrogen flow variation into an RF plasma cell on plasma properties and GaInNAs grown by molecular beam epitaxy," J. Vac. Sci. Technol. B, vol.23, no.3, pp. 1328-1332, May 2005.
49. V. Kirchner, H. Heinke, U. Birkle, S. Einfeldt, D. Hommel, H. Selke, and P. L. Ryder, "Ion-induced crystal damage during plasma-assisted MBE growth of GaN layers," Phys. Rev. B, vol.58, no.23, pp. 15 749-15 755, Dec. 1998.
50. H. Carrere, A. Arnoult, A. Ricard, and E. Bedel-Pereira, "RF plasma investigations for plasma-assisted MBE growth, of (Ga,In)(As,N) materials," J. Cryst. Growth, vol.243, no.2, pp. 295-301, Aug. 2002.
51. T. Kageyama, T. Miyamoto, S. Makino, F. Koyama, and K. Iga, "Optical quality of GaNAs and GaInNAs and its dependence on RF cell condition in chemical beam epitaxy," J. Cryst. Growth, vol. 209, no. 2/3, pp. 350-354, Feb. 2000.
52. M. Fischer, D. Gollub, M. Reinhardt, M. Kamp, and A. Forchel, "GaInNAs for GaAs based lasers for the 1.3 to 1.5 μm range,"J. Cryst. Growth, vol. 251, no. 1/4, pp. 353-359, Apr. 2003.
53. J. S. Harris, S. R. Bank, M. A. Wistey, and H. B. Yuen, "GaInNAs(Sb) long wavelength communications lasers," Proc. IEE Optoelectronics, vol.151, no.5, pp. 407-416, 2004.
54. M. A. Wistey, S. R. Bank, H. B. Yuen, H. P. Bae, and J. S. Harris, "Nitrogen plasma optimization for high-quality dilute nitrides," J. Cryst. Growth, vol.278, pp. 229-233, 2005.
55. A. J. Ptak, M. R. Millecchia, T. H. Myers, K. S. Ziemer, and C. D. Stinespring, "The relation of active nitrogen species to high-temperature limitations for (000) GaN growth by radio-frequency-plasma-assisted molecular beam epitaxy," Appl. Phys. Lett, 74, pp. 3836-3838, 1999. (Pubitemid 129308120)
56. A. J. Ptak, K. S. Ziemer, M. R. Millecchia, C. D. Stinespring, and T. H. Myers, "Influence of active nitrogen species on the nitridation rate of sapphire," MRS Internet J. Nitride Semicond Res., vol.4S1, p. G3.10, 1999.
57. M. Wistey, "Growth of 1.5 μm. GaInNAsSb vertical cavity surface emitting lasers by molecular beam epitaxy," Ph.D. dissertation, Elect. Eng. Dept., Stanford Univ., Stanford, CA, Dec. 2004.
58. M. M. Oye, M. A. Wistey, J. M. Reifsnider, S. Agarwal, T. J. Mattord, S. Govindaraju, G. A. Hallock, A. L. Holmes, S. R. Bank, H. B. Yuen, and J. S. Harris, "Ion damage effects from negative deflector plate voltages during the plasma-assisted molecular beam epitaxy growth of dilute nitrides," Appl. Phys. Lett., vol.86, pp. 221902-1-221902-3, May 2005.
59. I. A. Buyanova, W. M. Chen, G. Pozina, J. P. Bergman, B. Monemar, H. P. Xin, and C. W. Tu, "Mechanism, for low-temperature photoluminescence in GaNAs-GaAs structures grown by molecular-beam epitaxy," Appl. Phys. Lett., vol.75, pp. 501-503, 1999. (Pubitemid 129308310)
60. X. Kong, A. Trampert, E. Tournie, and K. H. Ploog, "Decomposition in as-grown GaInNAs quantum wells," Appl. Phys. Lett, vol.87, no.17, p. 171901, 2005.
61. J. S. Harris, "GaInNAs long-wavelength lasers: Progress and challenges," Semicond. Sci. Technol., vol.17, pp. 880-891, 2002.
62. L. L. Goddard, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "High-performance GaInNAsSb-GaAs lasers at 15 um," Proc. SPIE, vol.5738, pp. 180-191, 2005.
63. S. R. Bank, L. L. Goddard, M. A. Wistey, H. B. Yuen, and J. S. Harris, "On the temperature sensitivity of 1.5 μm GaInNAsSb lasers," IEEE J. Quantum Electron., vol.11, no.5, pp. 1089-1098, May 2005.
64. M. Fischer, D. Gollub, M. Reinhardt, M. Kamp, and A. Forchel, "GaInNAs for GaAs based lasers for the 1.3 μm to 1.5 μm range," J. Cryst. Growth, vol.251, pp. 353-359, 2003.
65. x layers: Infleunce of post-growth treatments," Appl. Phys. Lett, vol.72, pp. 1409-11401, 1998.
66. T. Kageyama, T. Miyamoto, S. Makino, F. Koyama, and K. Iga, "Thermal annealing of GaInNAs-GaAs quantum wells grown by chemical beam, epitaxy and its effects on photoluminiscence," Jpn. J. Appl. Phys., vol.38, pp. L298-L300, 1999.
67. H. P. Xin, K. L. Kavanagh, M. Kondow, and C. W. Tu, "Effects of rapid thermal annealing on GaInNAs-GaAs multiple quantum wells," J. Cryst. Growth, vol.201-202, pp. 419-422, 1999.
68. S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, and J. S. Harris, "Over-annealing effects in GaInNAs(Sb) alloys and their importance to laser applications," Appl. Phys. Lett, vol.88, no.22, pp. 221115-1-221115-3, Jun. 2006.
69. M. Hugues, B. Damilano, J.-Y. Duboz, and J. Massies, "Optimum indium composition for (Ga, In)(N, As)-GaAs quantum wells emitting beyond 1.5μm," Appl. Phys. Lett, vol.88, pp. 091111-1 -091111 -3, 2006.
70. H. B. Yuen, S. R. Bank, H. Bae, M. A. Wistey, and J. S. Harris, "Effects of strain on the optimal annealing temperature of GaInNAsSb quantum wells," Appl. Phys. Lett, vol.88, pp. 221913-1-221913-3, 2006.
71. S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, and J. S. Harris, "Room-temperature continuous-wave 1.55- μm GaInNAsSb laser on GaAs." Electron. Lett., vol.42, no.3, pp. 39-40, 2006.
72. P. J. Klar, H. Grüning, J. Koch, S. Schäfer, K. Volz W. Stolz, W. Heimbrodt, A. M. K. Saadi, A. Lindsay, and E. P. O'R.eilly, "(Ga, In)(N, As)-fine structure of the bandgap due to nearest-neighbor configurations of the isovalent nitrogen," Phys. Rev. B, vol.64, pp. 121203-1-121203-4, 2001.
73. V. Lordi, V. Gambin, S. Friedrich, T. Funk, T. Takizawa, K. Uno, and J. S. Harris, "Nearest-neighbor configuration in (GaIn)(NAs) probed by x-ray absorption spectroscopy," Phys. Rev. Lett., vol.90, p. 145505, 2003.
74. V. Lordi, H. B. Yuen, S. R. Bank, M. A. Wistey, S. Friedrich, and J. S. Harris, "Nearest neighbor distributions in GaInNAs(Sb) upon annealing," Phys. Rev. Lett., vol.71, p. 125309, 2005.
75. W. A. Harrison, Aug. 2005, Private Communication.
76. V. Lordi, H. B. Yuen, S. R. Bank, and J. S. Harris, "Quantum- confined Stark effect of GaInNAs(Sb) quantum wells at 1300-1600 nm," Appl. Phys. Lett, vol.85, no.6, pp. 902-904, Aug. 2004.
77. G. Mussler, J.-M. Chauveau, A. Trampert, M. Ramsteiner, L. Däweritz, and K. H. Ploog, "Nitrogen-dependent optimum, annealing temperature of Ga(As, N)," J. Cryst. Growth, vol.267, pp. 60-66, 2004.
78. N. Tansu, J. Y. Yeh, and L. J. Mawst, "Low-threshold 1317-nm. InGaAsN quantum-well lasers with GaAsN barriers," Appl. Phys. Lett., vol.83, pp. 2512-2514, 2003.
79. S. R. Bank, M. A. Wistey, L. L. Goddard, H. B. Yuen, V. Lordi, and J. S. Harris, "Low threshold, continuous wave, 1.5 μm GaInNAsSb lasers grown on GaAs," IEEE J. Quantum Electron., vol.40, no.6, pp. 656-664, Jun. 2004.
80. R. Kudrawiec, H. Yuen, K. Ryczko, J. Misiewicz, S. Bank, M. Wistey, H. Bae, and J. S. Harris, Jr., "Photoreflectance and photoluminescence investigations of a step-like GaInNAsSb-GaAsN-GaAs quantum well tailored at 1.5 μm: The energy level structure and the Stokes shift," J. Appl. Phys., vol.97, pp. 053515-1-053515-7, Mar. 2005.
81. x /GaAs single quantum wells with 0 < x ≤ 0.11 studied by contactless electroreflectance spectroscopy," Phys. Rev. B, vol.73, pp. 245413-1-245413-6, Jun. 2006.
82. R. Kudrawiec, H. B. Yuen, M. Motyka, M. Gladysiewicz, J. Misiewicz, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb-GaAs single quantum wells with indium content of 8%-32%," J. Appl. Phys., vol.100, Nov. 2006, in press.
83. N. Tansu and L. J. Mawst, "Temperature sensitivity of 1300-nm InGaAsN quantum-well lasers," IEEE Photon. Technol. Lett., vol.14, no.8, pp. 1052-1054, Aug. 2002.
84. N. Tansu, J. Y. Yeh, and L. J. Mawst, "Experimental evidence of carrier leakage in InGaAsN quantum-well lasers," Appl. Phys. Lett, vol.83, pp. 2112-2114, Sep. 2003.
85. M. Hetterich, M. D. Dawson, A. Y. Egorov, D. Bernklau, H. Riechert, S. W. Bland, J. I. Davies, and M. D. Geen, "Comparison of GaInNAs-GaAs and strain-compansated InGaAs-GaAsP quantum wells for 1200-1300 nm diode lasers," in Proc. 12th Annu. Meeting IEEE LEOS, 1999, vol.1, p. 368.
86. N. Tansu and L. J. Mawst, "Low-threshold strain-compensated InGaAs(N) (λ = 1.19 - 1.31 μm.) quantum-well lasers," IEEE Photon. Techol. Lett., vol.14, no.4, pp. 444-446, Apr. 2002.
87. S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, and J. S. Harris, "The role and suppression of carrier leakage in 1.5 μm GaInNAsSb-GaAs lasers," in Proc. 62nd Dev. Res. Conf (DRC), 2004, pp. 158-159.
88. S. J. Sweeney, A. F. Phillips, A. R. Adams, E. P. O'Reilly, and P. J. A. Thijs, "The effect of temperature dependent processes on the performance of 1.5-um compressively strained InGaAs(P) MQW semiconductor diode lasers," IEEE Photon. Technol. Lett, vol.10, no.8, pp. 1076-1078, Aug. 1998.
89. R. Fehse, S. Jin, S. J. Sweeney, A. R. Adams, E. P. O'Reilly, H. Riechert, S. Mek, and A. Y. Egorov, "Evidence for large monomolecular recombination contribution to threshold current in 1.3 μm GaInNAs semiconductor lasers," Electron. Lett., vol.37, no.25, pp. 1518-1520, Dec. 2001.
90. L. Goddard, S. Bank, M. Wistey, H. Yuen, H. Bae, and J. S. Harris, Jr., "Reduced monomolecular recombination in GaInNAsSb-GaAs lasers at 1.5 μm," in Proc. IEEE LEOS Annual Meeting Conf., Piscataway, NJ, Nov. 2004, vol.1, pp. 144-145.
91. L. L. Goddard, R. Kudrawiec, S. R. Bank, H. Bae, H. B. Yuen, M. A. Wistey, and J. S. Harris, Jr., "High accuracy measurements of the local Z-parameter," , unpublished.
92. R. Kudrawiec, H. Yuen, K. Ryczko, J. Misiewicz, S. Bank, M. Wistey, H. Bae, and J. S. Harris, Jr., "Photoreflectance and photoluminescence investigations of a step-like GaInNAsSb-GaAsN-GaAs quantum well tailored at 1.5 μm: The energy level structure and the Stokes shift," J. Appl. Phys., vol.97, pp. 053515-1-053515-7, Mar. 2005.
93. P. Krispin, V. Gambin, J. S. Harris, and K. Ploog, "Nitrogen-related electron traps in Ga(As,N) layers (≤3% N)," J. Appl. Phys., vol.93, pp. 6095-6099, May 2003.