On the optical crystal properties of quantum-well GaIn(N)As/GaAs semiconductors grown by molecular-beam epitaxy

Journal of Crystal Growth

Volumn 297, Issue 1, 2006, Pages 33-37

  Pavelescu, E M ^a   Slotte, J ^b   Dhaka, V D S ^c   Saarinen, K ^a   Antohe, S ^d   Cimpoca, Gh ^a   Pessa, M ^c  

^a VALAHIA UNIVERSITY OF TARGOVISTE   (Romania)

^b AALTO UNIVERSITY   (Finland)

^c TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^d UNIVERSITY OF BUCHAREST   (Romania)

Author keywords

A1. Photoluminescence; A1. Point defects; A1. Positron annihilation; A1. X ray diffraction; A3. Molecular beam epitaxy; B2. Dilute nitrides

Indexed keywords

LIGHT EMISSION; MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOLUMINESCENCE; POINT DEFECTS; POSITRON ANNIHILATION SPECTROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SPECTRUM ANALYSIS; X RAY DIFFRACTION ANALYSIS;

DILUTE NITRIDES; OPTICAL CRYSTAL PROPERTIES; QUANTUM WELL GAIN(N)AS/GAAS SEMICONDUCTORS; THERMAL ANNEALING;

CRYSTAL GROWTH;

EID: 33751524895     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.09.012     Document Type: Article

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