Interface structure and chemistry in ZnSe/Ga1-xMnxAs/ZnSe heterostructures

Applied Physics Letters

Volumn 82, Issue 21, 2003, Pages 3656-3658

  Lian, G D ^a   Dickey, E C ^a   Chun, S H ^a,b   Ku, K C ^a   Samarth, N ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b Sejong University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LOSS SPECTROSCOPY; EPITAXIAL GROWTH; FERROMAGNETIC MATERIALS; HETEROJUNCTIONS; HIGH RESOLUTION ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; MULTILAYERS; SEMICONDUCTING GALLIUM ARSENIDE; STACKING FAULTS; SUBSTRATES; SURFACE CHEMISTRY; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

PLANAR DEFECTS;

ZINC ALLOYS;

EID: 0037969737     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1577825     Document Type: Article

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