Quantifying stoichiometry of mixed-cation-anion III-V semiconductor interfaces at atomic resolution

Applied Physics Letters

Volumn 88, Issue 9, 2006, Pages

  Mahalingam, K ^a   Eyink, K G ^a   Brown, G J ^a   Dorsey, D L ^a   Kisielowski, C F ^b   Thust, A ^c  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC RESOLUTION; ATOMIC-SCALE COMPOSITIONAL ANALYSIS; FOCAL-SERIES RECONSTRUCTION TECHNIQUE; SEMICONDUCTOR INTERFACES;

COMPOSITION; HETEROJUNCTIONS; INTERFACES (MATERIALS); NEGATIVE IONS; POSITIVE IONS; STOICHIOMETRY; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR MATERIALS;

EID: 33644672006     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2178771     Document Type: Article

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