An integrated material removal model for silicon dioxide layers in chemical mechanical polishing processes

Wear

Volumn 266, Issue 7-8, 2009, Pages 839-849

  Oh, Seunghee ^a   Seok, Jongwon ^a  

^a Chung Ang University   (South Korea)

Author keywords

Chemical mechanical polishing; Contact mechanics; Coupled material removal model; Diffusion; Non Prestonian behavior

Indexed keywords

CHEMICAL POLISHING; DIFFUSION; GRINDING (MACHINING); MATERIALS; MECHANICS; NANOTECHNOLOGY; POLISHING; SILICA; SURFACE TREATMENT;

CHEMICAL DIFFUSIONS; CHEMICAL-MECHANICAL POLISHING PROCESS; CMP PROCESS; CONTACT MECHANICS; COUPLED EFFECTS; COUPLED MATERIAL REMOVAL MODEL; EXPERIMENTAL VALUES; INTEGRATED MATERIALS; LINEAR FUNCTIONS; MATERIAL REMOVAL MECHANISMS; MATERIAL REMOVAL RATES; MECHANICAL ABRASIONS; MULTI-SCALE; NON-LINEAR RELATIONSHIPS; NON-PRESTONIAN BEHAVIOR; OPERATING CONDITIONS; OPERATING REGIMES; POWER DENSITIES; SILICON DIOXIDE CMP; SILICON DIOXIDE LAYERS; SILICON DIOXIDES; SYNERGETIC EFFECTS;

CHEMICAL MECHANICAL POLISHING;

EID: 61549119780     PISSN: 00431648     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.wear.2008.12.014     Document Type: Article

References (53)

1. Larsen-Basse J., and Liang H. Probable role of abrasion in chemo-mechanical polishing of tungsten. Wear 233-235 (1999) 647-654
2. Kallingal C.G., Duquette D.J., and Murarka S.P. An investigation of slurry chemistry used in chemical mechanical planarization of aluminum. Journal of the Electrochemical Society 145 6 (1998) 2074-2081
3. Preston F.W. The theory and design of plate glass polishing machines. Journal of the Society of Glass Technology 11 (1927) 214-256
4. Runnels S.R., and Eyman L.M. Tribology analysis of chemical-mechanical polishing. Journal of the Electrochemical Society 141 6 (1994) 1698-1701
5. Runnels S.R. Feature-scale fluid-based erosion modeling for chemical-mechanical polishing. Journal of the Electrochemical Society 141 7 (1994) 1900-1904
6. Luo J., and Dornfeld D.A. Material removal mechanism in chemical mechanical polishing: theory and modeling. IEEE Transactions on Semiconductor Manufacturing 14 2 (2001) 112-133
7. Zhao Y., and Chang L. A micro-contact and wear model for chemical-mechanical polishing of silicon wafers. Wear 252 (2002) 220-226
8. Seok J., Sukam C.P., Kim A.T., Tichy J.A., and Cale T.S. Multiscale material removal modeling of chemical mechanical polishing. Wear 254 (2003) 307-320
9. Cook L.M. Chemical processes in glass polishing. Journal of Non-crystalline Solids 120 (1990) 152-171
10. Kaufman F.B., Thompson D.B., Broadie R.E., Jaso M.A., Guthrie W.L., Pearson D.J., and Small M.B. Chemical-mechanical polishing for fabricating patterned W metal features as chip interconnects. Journal of the Electrochemical Society 138 11 (1991) 3460-3465
11. Steigerwald J.M., Murarka S.P., Gutmann R.J., and Duquette D.J. Chemical processes in the chemical mechanical polishing of copper. Materials Chemistry and Physics 41 (1995) 217-228
12. Borst C.L., Thakurta D.G., Gill W.N., and Gutmann R.J. Surface kinetics model for SiLK chemical mechanical polishing. Journal of the Electrochemical Society 149 2 (2002) G118-G127
13. Paul E. A model of chemical mechanical polishing. Journal of the Electrochemical Society 148 6 (2001) G335-G338
14. Osseo-Asare K. Surface chemical process in chemical mechanical polishing. Journal of the Electrochemical Society 149 12 (2002) G651-G655
15. Wolf H., Streiter R., Rzehak R., Meyer F., and Springer G. Empirical modeling of oxide CMP at chip scale. Microelectronic Engineering 82 (2005) 686-694
16. Thagella S., Sikder A.K., and Kumara A. Tribological issues and modeling of removal rate of low-k films in CMP. Journal of the Electrochemical Society 151 3 (2004) G205-G215
17. Tseng W.T., and Wang Y.L. Re-examination of pressure and speed dependences of removal rate during chemical-mechanical polishing processes. Journal of Electrochemical Society Letters 144 2 (1997) L15-L17
18. Luo Q., Ramarajan S., and Babu S.V. Modification of the Preston equation for the chemical-mechanical polishing of copper. Thin Solid Films 335 (1998) 160-167
19. Fu G., Chandra A., Guha S., and Subhash G. A plasticity-based model of material removal on chemical-mechanical polishing (CMP). IEEE Transactions on Semiconductor Manufacturing 14 4 (2001) 406-417
20. Liang H., Kaufman F., Sevilla R., and Anjur S. Wear phenomena in chemical mechanical polishing. Wear 211 (1997) 271-279
21. Tichy J., Levert J., Shan L., and Danyluk S. Contact mechanics and lubrication hydrodynamics of chemical mechanical polishing. Journal of Electrochemical Society 146 4 (1999) 1523-1528
22. Shan L., Levert J., Meade L., Tichy J., and Danyluk S. Interfacial fluid mechanics and pressure prediction in chemical mechanical polishing. ASME Journal of Tribology 122 3 (2000) 539-543
23. Greenwood J.A., and Williamson J.B.P. Contact of nominally flat surfaces. Proceedings of the Royal Society of London Series A 295 (1966) 300-319
24. Jeng Y.R., and Huang P.Y. A material removal rate model considering interfacial micro-contact wear behavior for chemical mechanical polishing. ASME Journal of Tribology 127 (2005) 190-197
25. Lin C., Tseng W., and Feng M. Process optimization and integration for silicon oxide intermetal dielectric planarized by chemical mechanical polish. Journal of the Electrochemical Society 146 5 (1999) 1984-1990
26. Shi F.G., and Zhao B. Modeling of chemical-mechanical polishing with soft pads. Applied Physics A: Materials Science & Processing 67 (1998) 249-252
27. Guo L., and Subramanian R.S. Mechanical removal in CMP of copper using alumina abrasives. Journal of the Electrochemical Society 151 2 (2004) G104-108
28. Zhao Y., Maietta D.M., and Chang L. An asperity microcontact model incorporating the transition from elastic deformation to fully plastic flow. ASME Journal of Tribology 122 (2000) 86-93
29. Liu C.W., Dai B.T., Tseng W.T., and Yeh C.F. Modeling of the wear mechanism during chemical-mechanical polishing. Journal of the Electrochemical Society 143 2 (1996) 716-721
30. Kim A.T., Seok J., Tichy J.A., and Cale T.S. A multiscale contact mechanics and hydrodynamics model of chemical mechanical polishing. In: Wade T. (Ed). Proceedings of the 18th VMIC, IMIC (2001) 129-134
31. Y. Moon, Mechanical aspects of the material removal mechanism in chemical mechanical polishing (CMP), Ph.D. dissertation, University of California at Berkeley, Berkeley, 1999.
32. Nogami M., and Tomozawa M. Effect of stress on water diffusion in silica glass. Journal of the American Ceramic Society 67 2 (1983) 151-154
33. Tomozawa M., and Hirao K. Diffusion of water into oxides during microhardness indentation. Journal of Materials Science Letters 6 (1987) 867-868
34. Shewmon P.G. Diffusion in Solids (1963), McGraw-Hill book company, Inc., New York
35. Paul E., Kaufman F., Brusic V., Zhang J., Sun F., and Vacassy R. A model of copper CMP. Journal of the Electrochemical Society 152 4 (2005) G322-G328
36. Sarler B. Stefan's work on solid-liquid phase changes. Engineering Analysis with Boundary Elements 16 (1995) 83-92
37. Charns L., Sugiyama M., and Philipossian A. Mechanical properties of chemical mechanical polishing pads containing water-soluble particles. Thin Solid Films 485 1-2 (2005) 188-193
38. 2 by chemical mechanical polishing. Materials Research Society Symposia Proceedings 671 (2001) M1.6
39. Gan T., Tugbawa T., Lee B., Boning D.S., and Jang S. Modeling of reverse tone etchback shallow trench isolation chemical mechanical polishing. Journal of the Electrochemical Society 148 3 (2001) G159-G165
40. Chang S.H. A dishing model for chemical mechanical polishing of metal interconnect structures. Microelectronic Engineering 77 1 (2005) 76-84
41. J.Y. Lai, Mechanics, Mechanisms, and Modeling of the Chemical Mechanical Polishing Process, Ph.D. Dissertation, University of M.I.T, M.I.T, 2001.
42. S.Y. Shih, L.J. Chen, Thermal characteristics study of CMP low dielectric constant material, CMP-MIC Conference, Santa Clara, CA, U.S., 1998, pp. 305-312.
43. Tomozawa H., and Tomozawa M. Diffusion of water into a borosilicate glass. Journal of Non-crystalline Solids 109 2-3 (1989) 311-317
44. Wakabayashi H., and Tomozawa M. Diffusion of water into silica glass at low temperature. Journal of the American Ceramic Society 72 10 (1989) 1850-1855
45. Lanford W.A. In: Snyder R.L., Condrate R.A., and Johnson P.F. (Eds). Advances in materials characterization, II, Materials Science Research, vol. 19 (1985), Plenum Press, New York 203-208
46. Maple™ V, User Manual Release 5, Waterloo Maple Inc., 1997.
47. Mathworks, Matlab™ version 6.5, Mathworks Inc., 2002.
48. Luo J., and Dornfeld D.A. Effects of abrasive size distribution in chemical mechanical planarization: modeling and verification. IEEE Transactions on Semiconductor Manufacturing 16 3 (2003) 469-476
49. Bielmann M., Mahajan U., and Singh R.K. Effect of particle size during tungsten chemical mechanical polishing. Electrochemical and Solid-state Letters 2 (1999) 401-403
50. Forsberg M. Effect of process parameters on material removal rate in chemical mechanical polishing of Si(1 0 0). Microelectronic Engineering 77 3-4 (2005) 319-326
51. Zhao Y., Chang L., and Kim S.H. A mathematical model for chemical-mechanical polishing based on formation and removal of weakly bonded molecular species. Wear 254 3 (2003) 332-339
52. L. Čermák, M. Zlámal, Finite element solution of a nonlinear diffusion problem with a moving boundary, Lecture Notes in Mathematics, Springer, Berlin/Heidelberg, 1192/1986, 1986, pp. 291-294.
53. Seok J., Kim A.T., Sukam C.P., Jindal A., Tichy J.A., Gutmann R.J., and Cale T.S. Inverse analysis of material removal data using a multiscale CMP model. Microelectronic Engineering 70 2-4 (2003) 478-488