Modeling of reverse tone etchback shallow trench isolation chemical mechanical polishing

Journal of the Electrochemical Society

Volumn 148, Issue 3, 2001, Pages

  Gan, Terence ^a,b   Tugbawa, Tamba ^a,b   Lee, Brian ^a,b   Boning, Duane S ^a,b   Jang, Simon ^a,b  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0013004933     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1348266     Document Type: Article

References (2)

1. J. Grillaert, M. Meuris, N. Heyley, K. Devriendt, E. Vrancken, and M. Heyns, in Proceedings of Chemical Mechanical Polish for ULSI Multilevel Interconnection Conference, p. 79, Santa Clara, CA (1998).
2. S. D. Hosali, A. R. Sethuraman, J.-F. Wang, L. M. Cook, and D. R. Evans, in Proceedings of Chemical Mechanical Polish for ULSI Multilevel Interconnection Conference, p. 52, Santa Clara, CA (1997).