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Volumn 149, Issue 12, 2002, Pages

Surface chemical processes in chemical mechanical polishing relationship between silica material removal rate and the point of zero charge of the abrasive material

Author keywords

[No Author keywords available]

Indexed keywords

ABRASIVES; ADSORPTION; CHEMICAL BONDS; CHEMICAL MECHANICAL POLISHING; COMPLEXATION; DISSOLUTION; MATHEMATICAL MODELS; SURFACE TREATMENT; VISUALIZATION;

EID: 0036959409     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1516777     Document Type: Article
Times cited : (38)

References (19)
  • 4
    • 0012636934 scopus 로고    scopus 로고
    • R. L. Opila, C. Reidsema-Simpson, K. B. Sundaram, and S. Seal, Editors, PV 2000-26; The Electrochemical Society Proceedings Series, Pennington, NJ
    • K. Osseo-Asare and P. Suphantharida, in Chemical Mechanical Planarization IV, R. L. Opila, C. Reidsema-Simpson, K. B. Sundaram, and S. Seal, Editors, PV 2000-26, p. 222. The Electrochemical Society Proceedings Series, Pennington, NJ (2001).
    • (2001) Chemical Mechanical Planarization IV , pp. 222
    • Osseo-Asare, K.1    Suphantharida, P.2
  • 14
    • 0002503784 scopus 로고
    • M. A. Anderson and A. J. Rubin, Editors; Ann Arbor Science Publishers, Ann Arbor, MI
    • C. P. Huang, in Adsorption of Inorganics at Solid-Liquid Interfaces, M. A. Anderson and A. J. Rubin, Editors, p. 183, Ann Arbor Science Publishers, Ann Arbor, MI (1981).
    • (1981) Adsorption of Inorganics at Solid-Liquid Interfaces , pp. 183
    • Huang, C.P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.