Plasma etching of Hf-based high- k thin films. Part II. Ion-enhanced surface reaction mechanisms

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 27, Issue 2, 2009, Pages 217-223

  Martin, Ryan M ^a,c   Blom, Hans Olof ^b   Chang, Jane P ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UPPSALA UNIVERSITY   (Sweden)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ETCHINGS; ENHANCED SURFACES; ETCH PRODUCTS; ETCH RATES; FILM COMPOSITIONS; HAFNIUM ALUMINATES; ION ENERGIES; LINEAR DEPENDENCES; PLASMA CHEMISTRIES; REACTION PRODUCTS; SURFACE TERMINATIONS; TRANSITION POINTS; VOLATILE ETCH PRODUCTS;

BORON; BORON COMPOUNDS; CHEMICAL ANALYSIS; CHLORINE; HAFNIUM; HAFNIUM COMPOUNDS; IONS; OZONE WATER TREATMENT; PHOTORESISTS; PLASMA DEPOSITION; PLASMA DIAGNOSTICS; PLASMA ETCHING; SURFACE REACTIONS; THIN FILMS;

PLASMAS;

EID: 61449098516     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3065695     Document Type: Article

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