Ion-radical synergy in HfO2 etching studied with a XeF2 / Ar+ beam setup

Journal of Applied Physics

Volumn 103, Issue 8, 2008, Pages

  Gevers, P M ^a   Beijerinck, H C W ^a   Van De Sanden, M C M ^a   Kessels, W M M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELLIPSOMETRY; ETCHING; MASS SPECTROMETRY; REAL TIME CONTROL;

ION-RADICAL SYNERGY; PLASMA ETCH REACTORS; ROOM TEMPERATURE; SYNERGISTIC EFFECTS;

HAFNIUM COMPOUNDS;

EID: 43049103485     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2903058     Document Type: Article

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