Two-dimensional analytical modeling of fully depleted DMG SOI MOSFET and evidence for diminished SCEs

IEEE Transactions on Electron Devices

Volumn 51, Issue 4, 2004, Pages 569-574

  Kumar, M Jagadesh ^a   Chaudhry, Anurag ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

Author keywords

Device scaling; Insulated gate field effect transistors; Short channel effects (SCEs); Silicon on insulator (SOI) MOSFET; Threshold voltage; Two dimensional (2 D) modeling

Indexed keywords

COMPUTER SIMULATION; HOT CARRIERS; MATHEMATICAL MODELS; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; THICKNESS MEASUREMENT; THRESHOLD VOLTAGE;

SHORT CHANNEL EFFECTS; SUBMICROMETER REGIME; SURFACE POTENTIAL VARIATION;

MOSFET DEVICES;

EID: 1942423745     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.823803     Document Type: Article

References (6)

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