Diminished short channel effects in nanoscale double-gate silicon-on-insulator metal-oxide-semiconductor field-effect-transistors due to induced back-gate step potential

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 9 A, 2005, Pages 6508-6509

  Kumar, M Jagadesh ^a   Reddy, G Venkateshwar ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

Author keywords

Double gate; Drain induced barrier lowering (DIBL); Dual material gate; Gate to gate coupling; MOSFET; Silicon on insulator

Indexed keywords

FUNCTIONS; GATES (TRANSISTOR); MOSFET DEVICES;

DOUBLE GATE; DRAIN INDUCED BARRIER LOWERING (DIBL); SHORT CHANNEL EFFECTS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 31544448289     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.6508     Document Type: Article

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