New dual-material SG nanoscale MOSFET: Analytical threshold-voltage model

IEEE Transactions on Electron Devices

Volumn 53, Issue 4, 2006, Pages 920-923

  Kumar, M Jagadesh ^a   Orouji, Ali A ^b   Dhakad, Harshit ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^b SEMNAN UNIVERSITY   (Iran)

Author keywords

Device scaling; Insulated gate field effect transistor; Short channel effects (SCEs); Surrounding gate (SGT) MOSFET; Threshold voltage; Two dimensional (2 D) modeling

Indexed keywords

COMPUTER SIMULATION; FIELD EFFECT SEMICONDUCTOR DEVICES; GATES (TRANSISTOR); NANOSTRUCTURED MATERIALS; SEMICONDUCTOR DEVICE MODELS; THRESHOLD VOLTAGE;

DUAL MATERIAL GATE; SHORT CHANNEL EFFECTS; SURFACE POTENTIAL; SURROUNDING GATE MOSFET; TWO-DIMENSIONAL MODELING;

MOSFET DEVICES;

EID: 33645742862     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.870422     Document Type: Article

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