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Volumn 5276, Issue , 2004, Pages 1-10

Carbon nanotube transistors: An evaluation

Author keywords

Carbon nanotubes; Field effect transistors; Nanotechnology

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARBON NANOTUBES; CATALYSTS; ELECTRIC CONDUCTANCE; LIGHT MODULATION; MATHEMATICAL MODELS; NANOTECHNOLOGY; OPTICAL INTERCONNECTS; SILICON; TRANSCONDUCTANCE;

EID: 2442449187     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.533349     Document Type: Conference Paper
Times cited : (14)

References (33)
  • 1
    • 0034566959 scopus 로고    scopus 로고
    • Nanotubes for electronics
    • December
    • P. Collins and P. Avouris, "Nanotubes for electronics," Sci. Am., pp. 62-69, December 2000.
    • (2000) Sci. Am. , pp. 62-69
    • Collins, P.1    Avouris, P.2
  • 2
    • 79956003592 scopus 로고    scopus 로고
    • Chemical profiling of single nanotubes: Intramolecular p-n-p junctions and on-tube single-electron transistors
    • J. Kong, J. Cao, H. Dai, and E. Anderson, "Chemical profiling of single nanotubes: Intramolecular p-n-p junctions and on-tube single-electron transistors," Appl. Phys. Lett. 80(1), pp. 73-75, 2002.
    • (2002) Appl. Phys. Lett. , vol.80 , Issue.1 , pp. 73-75
    • Kong, J.1    Cao, J.2    Dai, H.3    Anderson, E.4
  • 3
    • 11944268977 scopus 로고
    • Ionic cohesion and electron doping of thin carbon tubules with alkali atoms
    • Y. Miyamoto, A. Rubio, X. Blase, M. Cohen, and S. Louie, "Ionic cohesion and electron doping of thin carbon tubules with alkali atoms," Phys. Rev. Lett. 74(15), pp. 2993-2996, 1995.
    • (1995) Phys. Rev. Lett. , vol.74 , Issue.15 , pp. 2993-2996
    • Miyamoto, Y.1    Rubio, A.2    Blase, X.3    Cohen, M.4    Louie, S.5
  • 4
    • 0032492884 scopus 로고    scopus 로고
    • Room-temperature transistor based on a single carbon nanotube
    • S. Tans, A. Verschueren, and C. Dekker, "Room-temperature transistor based on a single carbon nanotube," Nature 393, pp. 49-52, 1998.
    • (1998) Nature , vol.393 , pp. 49-52
    • Tans, S.1    Verschueren, A.2    Dekker, C.3
  • 5
    • 79955987859 scopus 로고    scopus 로고
    • Performance projections for ballistic carbon nanotube field-effect transistors
    • J. Guo, M. Lundstrom, and S. Datta, "Performance projections for ballistic carbon nanotube field-effect transistors," Appl. Phys. Lett. 80(17), pp. 3192-3194, 2002.
    • (2002) Appl. Phys. Lett. , vol.80 , Issue.17 , pp. 3192-3194
    • Guo, J.1    Lundstrom, M.2    Datta, S.3
  • 6
    • 79956043573 scopus 로고    scopus 로고
    • Metal-insulator-semiconductor electrostatics of carbon nanotubes
    • J. Guo, S. Goasguen, M. Lundstrom, and S. Datta, "Metal-insulator- semiconductor electrostatics of carbon nanotubes," Appl. Phys. Lett. 81(8), pp. 1486-1488, 2002.
    • (2002) Appl. Phys. Lett. , vol.81 , Issue.8 , pp. 1486-1488
    • Guo, J.1    Goasguen, S.2    Lundstrom, M.3    Datta, S.4
  • 7
    • 78651588920 scopus 로고    scopus 로고
    • Towards a compact model for Schottky-barrier nanotube FETs
    • M. Gal, ed., December
    • L. Castro, D. John, and D. Pulfrey, "Towards a compact model for Schottky-barrier nanotube FETs," in Proc. IEEE COMMAD, M. Gal, ed., pp. 303-306, December 2002.
    • (2002) Proc. IEEE COMMAD , pp. 303-306
    • Castro, L.1    John, D.2    Pulfrey, D.3
  • 8
    • 2442562014 scopus 로고    scopus 로고
    • Electrostatics of coaxial Schottky-barrier nanotube field-effect transistors
    • D. John, L. Castro, J. Clifford, and D. Pulfrey, "Electrostatics of coaxial Schottky-barrier nanotube field-effect transistors," IEEE Trans. Nanotechnol. 2(3), pp. 175-180, 2003.
    • (2003) IEEE Trans. Nanotechnol. , vol.2 , Issue.3 , pp. 175-180
    • John, D.1    Castro, L.2    Clifford, J.3    Pulfrey, D.4
  • 9
    • 1242305766 scopus 로고    scopus 로고
    • Bipolar conduction and drain-induced barrier thinning in carbon nanotube FETs
    • J. Clifford, D. John, and D. Pulfrey, "Bipolar conduction and drain-induced barrier thinning in carbon nanotube FETs," IEEE Trans. Nanotechnol. 2(3), pp. 181-185, 2003.
    • (2003) IEEE Trans. Nanotechnol. , vol.2 , Issue.3 , pp. 181-185
    • Clifford, J.1    John, D.2    Pulfrey, D.3
  • 11
    • 2442536440 scopus 로고    scopus 로고
    • Predicted performance advantages of carbon nanotube transistors with doped nanotubes as source/drain
    • Submitted
    • J. Guo, A. Javey, H. Dai, S. Datta, and M. Lundstrom, "Predicted performance advantages of carbon nanotube transistors with doped nanotubes as source/drain," Appl. Phys. Lett., 2003. Submitted.
    • (2003) Appl. Phys. Lett.
    • Guo, J.1    Javey, A.2    Dai, H.3    Datta, S.4    Lundstrom, M.5
  • 12
    • 0038299557 scopus 로고    scopus 로고
    • Separation of metallic from semiconducting single-walled carbon nanotubes
    • R. Krupke, F. Hennrich. H. Löhneysen, and M. Kappes, "Separation of metallic from semiconducting single-walled carbon nanotubes," Science 301, pp. 344-347, 2003.
    • (2003) Science , vol.301 , pp. 344-347
    • Krupke, R.1    Hennrich, F.2    Löhneysen, H.3    Kappes, M.4
  • 14
    • 0032606344 scopus 로고    scopus 로고
    • Carbon nanotubes as molecular quantum wires
    • C. Dekker, "Carbon nanotubes as molecular quantum wires," Phys. Today 52(5), pp. 22-28, 1999.
    • (1999) Phys. Today , vol.52 , Issue.5 , pp. 22-28
    • Dekker, C.1
  • 15
    • 0032607464 scopus 로고    scopus 로고
    • Integrated nanotube circuits: Controlled growth and ohmic contacting of single-walled carbon nanotubes
    • H. Soh, C. Quate, A. Morpurgo, C. Marcus. J. Kong, and H. Dai, "Integrated nanotube circuits: Controlled growth and ohmic contacting of single-walled carbon nanotubes," Appl. Phys. Lett. 75(5), pp. 627-629, 1999.
    • (1999) Appl. Phys. Lett. , vol.75 , Issue.5 , pp. 627-629
    • Soh, H.1    Quate, C.2    Morpurgo, A.3    Marcus, C.4    Kong, J.5    Dai, H.6
  • 16
    • 0005836651 scopus 로고    scopus 로고
    • Single- and multi-wall carbon nanotube field-effect transistors
    • R. Martel, T. Schmidt, H. Shea, and P. Avouris, "Single- and multi-wall carbon nanotube field-effect transistors," Appl. Phys. Lett. 73(17), pp. 2447-2449, 1998.
    • (1998) Appl. Phys. Lett. , vol.73 , Issue.17 , pp. 2447-2449
    • Martel, R.1    Schmidt, T.2    Shea, H.3    Avouris, P.4
  • 17
    • 79956055275 scopus 로고    scopus 로고
    • Electric-field-aligned growth of single-walled carbon nanotubes on surfaces
    • A. Ural, Y. Li, and H. Dai, "Electric-field-aligned growth of single-walled carbon nanotubes on surfaces," Appl. Phys. Lett. 81(18), pp. 3464-3466, 2002.
    • (2002) Appl. Phys. Lett. , vol.81 , Issue.18 , pp. 3464-3466
    • Ural, A.1    Li, Y.2    Dai, H.3
  • 18
    • 0000473307 scopus 로고    scopus 로고
    • Ultrahigh-density nanotransistors by using selectively grown vertical carbon nanotubes
    • W. Choi, J. Chu, K. Jeong, E. Bae. and J.-W. Lee, "Ultrahigh-density nanotransistors by using selectively grown vertical carbon nanotubes," Appl. Phys. Lett. 79(22), pp. 3696-3698. 2001.
    • (2001) Appl. Phys. Lett. , vol.79 , Issue.22 , pp. 3696-3698
    • Choi, W.1    Chu, J.2    Jeong, K.3    Bae, E.4    Lee, J.-W.5
  • 19
    • 2642660458 scopus 로고    scopus 로고
    • Electronic structure of atomically resolved carbon nanotubes
    • J. Wildöer. L. Venema, A. Rinzler, R. Smalley, and C. Dekker, "Electronic structure of atomically resolved carbon nanotubes," Nature 391, pp. 59-62, 1998.
    • (1998) Nature , vol.391 , pp. 59-62
    • Wildöer, J.1    Venema, L.2    Rinzler, A.3    Smalley, R.4    Dekker, C.5
  • 21
    • 0041947020 scopus 로고    scopus 로고
    • Role of Fermi-level pinning in nanotube Schottky diodes
    • F. Léonard and J. Tersoff, "Role of Fermi-level pinning in nanotube Schottky diodes," Phys. Rev. Lett. 84(20), pp. 4693-4696, 2000.
    • (2000) Phys. Rev. Lett. , vol.84 , Issue.20 , pp. 4693-4696
    • Léonard, F.1    Tersoff, J.2
  • 24
    • 0013068352 scopus 로고    scopus 로고
    • High performance electrolyte gated carbon nanotube transistors
    • S. Rosenblatt, Y. Yaish, J. Park, J. Gore. V. Sazonova, and P. McEuen, "High performance electrolyte gated carbon nanotube transistors," Nano Lett. 2(8), pp. 869-872, 2002.
    • (2002) Nano Lett. , vol.2 , Issue.8 , pp. 869-872
    • Rosenblatt, S.1    Yaish, Y.2    Park, J.3    Gore, J.4    Sazonova, V.5    McEuen, P.6
  • 26
    • 0142090023 scopus 로고    scopus 로고
    • Drain voltage scaling in carbon nanotube transistors
    • M. Radosavljević, S. Heinze, J. Tersoff, and P. Avouris, "Drain voltage scaling in carbon nanotube transistors," Appl. Phys. Lett. 83(12), pp. 2435-2437, 2003.
    • (2003) Appl. Phys. Lett. , vol.83 , Issue.12 , pp. 2435-2437
    • Radosavljević, M.1    Heinze, S.2    Tersoff, J.3    Avouris, P.4
  • 28
    • 0042991275 scopus 로고    scopus 로고
    • Ballistic carbon nanotube field-effect transistors
    • A. Javey, J. Guo, Q. Wang. M. Lundstrom, and H. Dai, "Ballistic carbon nanotube field-effect transistors," Nature 424, pp. 654-657, 2003.
    • (2003) Nature , vol.424 , pp. 654-657
    • Javey, A.1    Guo, J.2    Wang, Q.3    Lundstrom, M.4    Dai, H.5
  • 30
    • 0035718181 scopus 로고    scopus 로고
    • Carbon nanotube field effect transistors for logic applications
    • R. Martel, H.-S. Wong, K. Chan, and P. Avouris, "Carbon nanotube field effect transistors for logic applications," in IEDM Tech. Digest, pp. 159-162, 2001.
    • (2001) IEDM Tech. Digest , pp. 159-162
    • Martel, R.1    Wong, H.-S.2    Chan, K.3    Avouris, P.4
  • 32
    • 0037741962 scopus 로고    scopus 로고
    • Electrically induced optical emission from a carbon nanotube FET
    • J. Misewich, R. Martel, P. Avouris, J. Tsang, S. Heinze, and J. Tersoff, "Electrically induced optical emission from a carbon nanotube FET," Science 300, pp. 783-786, 2003.
    • (2003) Science , vol.300 , pp. 783-786
    • Misewich, J.1    Martel, R.2    Avouris, P.3    Tsang, J.4    Heinze, S.5    Tersoff, J.6
  • 33
    • 0036927921 scopus 로고    scopus 로고
    • Assessment of silicon MOS and carbon nanotube FET performance limits using a general theory of ballistic transistors
    • December
    • J. Guo, S. Datta, and M. Lundstrom, "Assessment of silicon MOS and carbon nanotube FET performance limits using a general theory of ballistic transistors," in IEDM Tech. Digest, pp. 711-714, December 2002.
    • (2002) IEDM Tech. Digest , pp. 711-714
    • Guo, J.1    Datta, S.2    Lundstrom, M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.