Internal efficiency analysis of 280 nm light emitting diodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5594, Issue , 2004, Pages 177-184

  Piprek, J ^a   Moe, C ^a   Keller, S ^a   Nakamura, S ^a   DenBaars, S P ^a  

^a University of California   (United States)

Author keywords

AlGaN quantum wells; Current leakage; Internal quantum efficiency; LED; Light emitting diode; Numerical simulation; Ultraviolet light source

Indexed keywords

ALGAN QUANTUM WELLS; INTERNAL QUANTUM EFFICIENCY; MULTIQUANTUM WELLS (MQW); ULTRAVIOLET LIGHT SOURCES;

COMPUTER SIMULATION; LEAKAGE CURRENTS; NUMERICAL METHODS; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 16644388461     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.567084     Document Type: Conference Paper

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