Piezoelectric and thermal effects on optical properties of violet-blue InGaN lasers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5628, Issue , 2005, Pages 156-163

  Yen, Sheng Horng ^a   Liou, Bo Ting ^b   Chen, Mei Ling ^a   Kuo, Yen Kuang ^a  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

^b HSIUPING INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

III V semiconductor; Numerical simulation; Optical property; Semiconductor laser

Indexed keywords

COMPUTER SIMULATION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; HETEROJUNCTIONS; LIGHT EMITTING DIODES; OPTICAL PROPERTIES; PIEZOELECTRICITY; SEMICONDUCTING INDIUM COMPOUNDS;

HOLE DISTRIBUTION; III-V SEMICONDUCTOR; LATTICE MISMATCH; MULTIPLE QUANTUM-WELL (MQW);

QUANTUM WELL LASERS;

EID: 18944375415     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.575319     Document Type: Conference Paper

References (31)

1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices," Jpn. J. Appl. Phys. 36, L1568, 1997.
2. M. Hansen, J. Piprek, P. M. Pattison, J. S. Speck, S. Nakamura, and S. P. Denbaars, "Higher efficiency InGaN diodes with an improved quantum well capping configuration," Appl. Phys. Lett. 81, 4275, 2002.
3. K. Domen, R. Soejima, A. Kuramata, and T. Tanahashi, "Electron overflow to the AlGaN p-cladding layer in InGaN/GaN/AlGaN MQW laser diodes," MRS Internet J. Nitride Semicond. Res. 3, 2, 1998.
4. S. Nakamura and G. Fasol, in: The Blue Laser Diode, Springer-Verlag, Heidelberg, 1997.
5. G. B. Stringfellow and M. G. Craford, in: High Brightness Light Emitting Diodes, Academic Press, San Diego, 1997.
6. J. I. Pankove and T. D. Moustakas, in: Gallium Nitride (GaN) I, Academic Press, San Diego, 1998.
7. J. I. Pankove and T. D. Moustakas, in: Gallium Nitride (GaN) II, Academic Press, San Diego, 1999.
8. G. Martin, A. Botchkarev, A. Rockett, and H. Morkoc, "Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy," Appl. Phys. Lett. 68, 2541, 1996.
9. J. Piprek, R. K. Sink, M. A. Hansen, J. E. Bowers, S. P. Denbaars, "Simulation and optimization of 420-nm InGaN/GaN laser diodes," in: R. H. Binder, P. Blood, M. Osinski (Ed.), Physics and Simulation of Optoelectronic Devices VIII, Proc. SPIE. 3944, 28, 2000.
10. C.-C. Chen, H.-W. Chung, G.-C. Chi, C.-C. Chuo, and J.-I. Chyi, "Stimulated-emission spectra of high-indium-content InGaN/GaN multiple-quantum-well structures," Appl. Phys. Lett. 77, 3758, 2000.
11. H. Ünlü and A. Asenov, "Band offsets in III-nitride heterostructures," J. Phys. D: Appl. Phys. 35, 591, 2002.
12. T. Deguchi, A. Shikanai, K. Torii, T. Sota, S. Chichibu, and S. Nakamura, "Luminescence spectra from InGaN multiquantum wells heavily doped with Si," Appl. Phys. Lett. 72, 3329, 1998.
13. 1-xN/GaN quantum wells," Phys. Rev. B 66, 035334, 2002.
14. J. Dalfors, J. P. Bergman, P. O. Holtz, B. E. Semelius, B. Monemar, H. Amano, and I. Akasaki, "Optical properties of doped InGaN/GaN multiquantum-well structures," Appl. Phys. Lett. 74, 3299, 1999.
15. R. M. Chu, Y. D. Zheng, Y. G. Zhou, S. L. Gu, B. Shen, R. Zhang, R. L. Jiang, P. Han, and Y. Shi, "Strong quantum confinement and high carrier concentration in AlGaN/InGaN/GaN heterostructure field-effect transistors," Appl. Phys. A 75, 1, 2002.
16. xN/GaN single and double quantum well structures," Solid State Commun. 123, 395, 2002.
17. M. S. Minsky, S. B. Fleischer, A. C. Abare, J. E. Bowers, E. L. Hu, S. Keller, and S. P. Denbaars, "Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence," Appl. Phys. Lett. 72, 1066, 1998.
18. J. Piprek and S. Nakamura, "Physics of high-power InGaN/GaN lasers," IEE Proc.-Optoelectron 149, 145, 2002.
19. 0.77N/GaN multiple quantum wells by electrotransmission spectroscopy," J. Appl. Phys. 91, 531, 2002.
20. A. Kunold and P. Pereyra, "Photoluminescence transitions in semiconductor superlattices. Theoretical calculations for InGaN blue laser device," J. Appl. Phys. 93, 5018, 2003.
21. 1-xN," Appl. Phys. Lett. 74, 3993, 1999.
22. Y. D. Jho, J. S. Yahng, E. Oh, and D. S. Kim, "Measurement of piezoelectric field and tuuneling times in strongly biased InGaN/GaN quantum wels," Appl. Phys. Lett. 79, 1130, 2001.
23. Y.-K. Kuo, B.-T. Liou, M.-L. Chen, S.-H. Yen, and C.-Y. Lin, "Effect of band-offset ratio on analysis of violet-blue InGaN laser characteristics," Opt. Commun. 231, 395, 2004.
24. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Matsushita, and T. Mukai, "Blue InGaN-based laser diodes with an emission wavelength of 450 nm," Appl. Phys. Lett. 76, 22, 2000.
25. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates," Appl. Phys. Lett. 72, 2014, 1998.
26. T. Asano, T. Tojyo, T. Mizuno, M. Takeya, S. Ikeda, K. Shibuya, T. Hino, S. Uchida, and M. Ikeda, "100-Mw kink-free blue-violet laser diodes with low aspect ratio," IEEE J. Quantum Electron. 39, 135, 2003.
27. M. Kneissl, W. S. Wong, D. W. Treat, M. Teepe, N. Miyashita, and N. M. Johnson, "Continuous-wave operation of InGaN multiple-quantum-well laser diodes on copper substrates obtained by laser liftoff," IEEE J. Select. Topics Quantum Electron. 7, 188, 2001.
28. xN alloys," Appl. Phys. Lett. 80, 4741, 2002.
29. D. Fritsch, H. Schmidt, and M. Grundmann, "Band-structure pseudopotential calculation of zinc-blende and wurtzite AlN, GaN, and InN," Phys. Rev. B 67, 235205, 2003.
30. F. Bernardini and V. Fiorentini, "Non-linear macroscopic polarization in III-V nitride alloys," Phys. Rev. B 64, 085207, 2001.
31. G. K. Wachutka, "Rigorous thermodynamic treatment of heat generation and conduction in semiconductor device modeling," IEEE Trans. Computer-Aided Design 9, 1141, 1990.