Efficient 230-280 nm emission from high-Al-content AlGaN-based multiquantum wells

Applied Physics Letters

Volumn 80, Issue 1, 2002, Pages 37-39

  Hirayama, Hideki ^a   Enomoto, Yasushi ^b   Kinoshita, Atsuhiro ^a   Hirata, Akira ^a   Aoyagi, Yoshinobu ^c  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^b WASEDA UNIVERSITY   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; AL CONTENT; ALGAN; ALN; BLUE EMISSION; DEEP-UV; MULTIQUANTUM WELLS; PL EMISSION; PL INTENSITY; ULTRA-VIOLET; WIDE BAND GAP;

GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; WELLS;

ALUMINUM;

EID: 79957952801     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1432112     Document Type: Article

References (12)

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