Modeling of Si 2p core-level shifts at Si-(ZrO2)x(SiO2)1-x interfaces

Applied Physics Letters

Volumn 81, Issue 22, 2002, Pages 4233-4235

  Giustino, Feliciano ^a,b   Bongiorno, Angelo ^a,b   Pasquarello, Alfredo ^a,b  

^a EPFL   (Switzerland)

^b INSTITUT ROMAND DE RECHERCHE NUMÉRIQUE EN PHYSIQUE DES MATÉRIAUX IRRMA   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; BINDING ENERGY; COMPUTER SIMULATION; INTERFACES (MATERIALS); MOLECULAR DYNAMICS; ZIRCONIUM;

FIRST-PRINCIPLES APPROACH;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0037175957     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1526172     Document Type: Article

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