Effect of postdeposition annealing on the interfacial and electrical properties of high- k Nd Ox Ny gate dielectrics

Applied Physics Letters

Volumn 92, Issue 7, 2008, Pages

  Pan, Tung Ming ^a   Hou, Sung Ju ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; ELECTRIC PROPERTIES; POTASSIUM COMPOUNDS; SILICON;

INTERFACE STATE; POSTDEPOSITION ANNEALING;

GATE DIELECTRICS;

EID: 39749111486     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2884333     Document Type: Article

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